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Suche nach „[IQMA]“ hat 159 Publikationen gefunden

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Elektrotechnik und Medientechnik IQMA Maschinenbau und Mechatronik

Beitrag (Sammelband oder Tagungsband)

Günther Benstetter, Werner Frammelsberger

Raster Sondenmikroskopie in der Mikro- und Nanoelektronik

Elektrotechnik und Elektronik in Bayern 2004

2004

Elektrotechnik und Medientechnik IQMA

Vortrag

D. Liu, Günther Benstetter

Comparison of bulk and surface structure in a-C:H films

International Conference on Plasma Surface Engineering (PSE2004), Garmisch-Partenkirchen

2004

Elektrotechnik und Medientechnik IQMA

Vortrag

D. Liu, Günther Benstetter, Edgar Lodermeier

Surface properties and growth of diamond-like carbon films prepared using CVD and PVD methods

E-MRS 2004, Strasbourg, Frankreich

2004

Elektrotechnik und Medientechnik IQMA Maschinenbau und Mechatronik

Vortrag

Günther Benstetter, Werner Frammelsberger, D. Liu, Peter Breitschopf

Failure analysis of deep sub-micron semiconductor structures and thin films with atomic force microscopy methods

First International conference on Engineering Failure Analysis (ICEFA), Lissabon, Portugal

2004

Elektrotechnik und Medientechnik IQMA Maschinenbau und Mechatronik

Vortrag

T. Schweinböck, S. Schömann, D. Alvarez, M. Buzzu, Günther Benstetter, Werner Frammelsberger, Peter Breitschopf

New Trends in the application of scanning probe techniques in failure analysis

15th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Zürich, Schweiz

2004

Elektrotechnik und Medientechnik IQMA Maschinenbau und Mechatronik

Vortrag

Günther Benstetter, Peter Breitschopf, Werner Frammelsberger, Heiko Ranzinger, P. Reislhuber, T. Schweinböck

AFM-based scanning capacitance techniques for deep sub-micron semiconductor failure analysis

15th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Zürich, Schweiz

2004

Elektrotechnik und Medientechnik IQMA Maschinenbau und Mechatronik

Zeitschriftenartikel

Werner Frammelsberger, Günther Benstetter, R. Stamp, J. Kiely, T. Schweinböck

Simplified tunnelling current calculation for MOS structures with ultra-thin oxides for Conductive Atomic Force Microscopy investigations

Materials Science & Engineering B, vol. 116, no. 2, pp. 168-174

2004

DOI: 10.1016/j.mseb.2004.09.027

Abstract anzeigen

As charge tunnelling through thin and ultra-thin silicon dioxide layers is regarded as the driving force for MOS device degradation the determination and characterisation of electrically week spots is of paramount importance for device reliability and failure analysis. Conductive atomic force microscopy (C-AFM) is able to address this issue with a spatial resolution smaller than the expected breakdown spot. For the determination of the electrically active oxide thickness in practice an easy to use model with sufficient accuracy and which is largely independent of the oxide thickness is required. In this work a simplified method is presented that meets these demands. The electrically active oxide thickness is determined by matching of C-AFM voltage–current curves and a tunnelling current model, which is based on an analytical tunnelling current approximation. The model holds for both the Fowler–Nordheim tunnelling and the direct tunnelling regime with one single tunnelling parameter set. The results show good agreement with macroscopic measurements for gate voltages larger than approximately 0.5–1 V, and with microscopic C-AFM measurements. For this reason arbitrary oxides in the DT and the FNT regime may be analysed with high lateral resolution by C-AFM, without the need of a preselection of the tunnelling regime to be addressed.

Elektrotechnik und Medientechnik IQMA Maschinenbau und Mechatronik

Zeitschriftenartikel

Günther Benstetter, Peter Breitschopf, Werner Frammelsberger, Heiko Ranzinger, P. Reislhuber, T. Schweinböck

AFM-based scanning capacitance techniques for deep sub-micron semiconductor failure analysis

Microelectronics Reliability, vol. 44, no. 9-11, pp. 1615-1619

2004

DOI: 10.1016/j.microrel.2004.07.079

Elektrotechnik und Medientechnik IQMA

Zeitschriftenartikel

D. Liu, Günther Benstetter, W. Wang, J. Zhang

Effect of pressure on the deposition of hydrogen-free amorphous carbon and carbon nitride films by the pulsed cathodic arc discharge method

Journal of Vacuum Science & Technology A, vol. 22

2004

DOI: 10.1116/1.1798691

Abstract anzeigen

Hydrogen-free amorphous carbon and carbon nitride films were deposited using the pulsed cathodic arc discharge at different argon and nitrogen pressures. The surface and mechanical properties of these films were found to strongly depend on the gas pressure. The tetrahedral amorphous carbon and hard films with smooth surfaces (rms roughness: ) were prepared at lower gas pressures. Incorporation of an increasing amount of nitrogen in films caused a decrease in filmhardness. All the films were covered with the thin graphite-like surface layers. The filmhardness was correlated to the soft surface layer thickness, and the films with thinner surface layers exhibit higher hardness. The mean energies of pulsed plasma beams were measured as the functions of argon and nitrogen pressures. The mean energies of plasma beams decrease in an exponential fashion with increasing gas pressure due to the carbon ion collisions with the neutral gas species. The effects of mean energies of deposited species on the filmdeposition were explained in terms of the thermal spike migration of surface atoms. The formation of graphite-like surface layers is associated with the low-energy deposition process. The low-energy species diffusing on filmsurface lead to the formation of graphite-like films with plenty of grains. The higher-energy species may produce the strong thermal spike at filmsurface, and contribute to the formation of bonded structure at a bonded matrix.

Elektrotechnik und Medientechnik IQMA Maschinenbau und Mechatronik

Zeitschriftenartikel

T. Schweinböck, S. Schömann, D. Alvarez, M. Buzzu, Günther Benstetter, Werner Frammelsberger, Peter Breitschopf

New Trends in the application of scanning probe techniques in failure analysis

Microelectronics Reliability, vol. 44, no. 9-11, pp. 1541-1546

2004

DOI: 10.1016/j.microrel.2004.07.037

Elektrotechnik und Medientechnik IQMA

Zeitschriftenartikel

D. Liu, Günther Benstetter, Edgar Lodermeier, J. Zhang, Y. Liu, J. Vancea

Filtered pulsed carbon cathodic arc: plasma and amorphous carbon properties

Journal of Applied Physics, vol. 95, pp. 7624-7631

2004

DOI: 10.1063/1.1753081

Abstract anzeigen

The carbonplasma ion energies produced by the filtered pulsed cathodic arc discharge method were measured as a function of filter inductance. The energy determination is based on the electro-optical time-of-flight method. The average ion energies of the pulsed ion beams were found to depend upon the rise time and duration of pulsed arc currents, which suggests that a gain of ion kinetic energy mainly arises from the electric plasma field from the ambipolar expansion of both electrons and ions, and an electron drag force because of the high expansion velocity of the electrons. The tetrahedral amorphous carbon (ta-C) films with a sp3 fraction of ∼70% were deposited on silicon substrates at the average ion energies of >6 eV in the highly ionized plasmas. The ta-C films were found to be covered with a few graphitelike atomic layers. The surfaceproperties of ultrathin carbonfilms, such as nanoscale friction coefficients, surface layer thickness, and silicon contents were strongly dependent on the ion energies. The growth of amorphous carbonfilms was explained in terms of the thermal spike migration of surfacecarbon atoms. In terms of this model, the thermal spike provides the energy required to release surface atoms from their metastable positions and leads to the formation of the sp3 bonded carbon on a sp3 bonded matrix. The experimental results indicate that the low-energy (<3 eV)carbon ions have insufficient energies to cause the rearrangement reaction within the film and they form graphitelike structures at filmsurface.

Elektrotechnik und Medientechnik IQMA Maschinenbau und Mechatronik

Beitrag (Sammelband oder Tagungsband)

Günther Benstetter, Werner Frammelsberger

Raster Sondenmikroskopie in der Mikro- und Nanoelektronik

1. Elektrotechnik und Elektronik in Bayern

2004

Elektrotechnik und Medientechnik IQMA Maschinenbau und Mechatronik

Vortrag

Werner Frammelsberger, Günther Benstetter, et al.

Atomic Force Microscopy Studies of Thin and Ultra-Thin SiO2 Films and Interfaces

2003

Elektrotechnik und Medientechnik IQMA