Publikationen


Suche nach „[I: IQMA]“ hat 159 Publikationen gefunden
Suchergebnis als PDF
    F: Elektrotechnik und MedientechnikI: IQMA

    Vortrag

    Alexander Hofer, B. Wilke, R. Biberger, Günther Benstetter, H. Göbel

    Capacitance and Conductivity Mapping of Organic Films and Devices with Non-Contact SPM Methods

    International Workshop on Scanning Probe Microscopy for Energy Applications, Mainz

    2011

    F: Elektrotechnik und MedientechnikI: IQMA

    Zeitschriftenartikel

    M. Lanza, M. Porti, M. Nafría, X. Aymerich, Günther Benstetter, Edgar Lodermeier, Heiko Ranzinger, G. Jaschke, S. Teichert, L. Wilde, P. Michalowski

    Conductivity and Charge Trapping After Electrical Stress in Amorphous and Polycrystalline Al2O3-Based Devices Studied With AFM-Related Techniques

    IEEE Transactions on Nanotechnology, vol. 10, no. 2, pp. 344-351

    2011

    Abstract anzeigen

    In this paper, atomic force microscopy-based techniques have been used to study, at nanoscale, the dependence of the electrical properties of Al2O3 stacks for flash memories on the annealing temperature (T-A). The electrical characterization has been combined with other techniques (for example, transmission electron microscopy) that have allowed to investigate the dependence of the stack crystallization and the Si diffusion from the substrate to the gate oxide on T-A. The combination of both the analyses has allowed to explore if there is a relation between the percentage of diffused silicon and material crystallization with the conductivity and charge trapping of Al2O3 stacks.

    F: Elektrotechnik und MedientechnikI: IQMA

    Vortrag

    Günther Benstetter

    New Trends in Electrical Scanning Probe Microscopy Techniques for Device and Thin Film Characterization

    2011

    F: Elektrotechnik und MedientechnikI: IQMA

    Zeitschriftenartikel

    R. Biberger, Günther Benstetter, et al.

    Intermittent-Contact Capacitance Spectroscopy – A new method for determining C(V) curves with sub-micron lateral resolution

    Microelectronics Reliability, vol. 50, pp. 1511-1513

    2010

    Abstract anzeigen

    This study introduces a novel method to measure C(V) characteristics of local MOS structures based on scanning probe microscopy (SPM) techniques. The new method operates in intermittent-contact (IC) mode and combines both the advantages of contact mode C(V) spectroscopy and intermittent-contact scanning capacitance microscopy. As a consequence, on the one hand dopant concentration and dopant type can be indicated simultaneously, on the other hand tip wear is reduced significantly.

    F: Elektrotechnik und MedientechnikI: IQMA

    Zeitschriftenartikel

    D. Liu, J. Gu, Z. Feng, D. Li, J. Niu, Günther Benstetter

    Comparison of fluorocarbon film deposition by pulsed/continuous wave and downstream radio frequency plasmas

    Vacuum, vol. 85, no. 2, pp. 253-262

    2010

    Abstract anzeigen

    Fluorocarbon (FC) films have been deposited using pulsed and continuous wave (cw) radio frequency (rf) plasmas fed with hexafluoroethane (C2F6), octafluoropropane (C3F8), or octafluorocyclobutane (C4F8). The effects of feed gases used, discharge pressure, rf power, substrate positions and discharge modes (pulsed or cw) on the deposited films are examined. Film properties are determined using X-ray photoelectron spectroscopy, atomic force microscopy, and static contact angle measurements. The contact angles of FC films are well related to their compositions and structures. Feed gases used, discharge pressure, rf power, substrate positions and discharge modes strongly affect the morphology of the resulting film, as revealed by atomic force microscopy. Optical emission spectrometry measurements were performed to in-situ characterize the gas-phase compositions of the plasmas and radicals’ emission intensities during film deposition. Correlations between film properties, gas-phase plasma diagnostic data, and film growth processes were discussed. The film growth in pulsed or downstream plasmas was controlled by the surface migration of radicals, such as CF2 towards nucleation centers, which result in the deposition of FC films with less cross-linked nature and rougher surfaces. These results demonstrate that it is possible to control film compositions and surface structure by changing deposition parameters.

    F: Elektrotechnik und MedientechnikI: IQMA

    Zeitschriftenartikel

    J. Niu, H.-X. Ding, Y. Cong, N. Yu, Günther Benstetter, D. Liu

    Plasma-assisted chemical vapor deposition of titanium oxide films by dielectric barrier discharge

    Submitted Article

    Thin Solid Films

    2010

    F: Elektrotechnik und MedientechnikI: IQMA

    Patent

    Günther Benstetter, et al.

    Method and apparatus for two-dimensional profiling of doping profiles of a material sample with scanning capacitance microscope

    2010

    F: Elektrotechnik und MedientechnikI: IQMA

    Vortrag

    R. Biberger, Günther Benstetter

    Displacement Current Sensor for two-dimensional dopant profiling

    ITG Discussion, Grainau

    2010

    F: Elektrotechnik und MedientechnikI: IQMA

    Vortrag

    Günther Benstetter, R. Biberger, Alexander Hofer, H. Göbel

    Intermittent-Contact Scanning Capacitance Analysis of Thin Dielectric Films and Semiconductor Devices

    Invited Talk

    5th International Conference on Technological Advances of Thin Films & Surface Coatings, Harbin, China

    2010

    F: Elektrotechnik und MedientechnikI: IQMA

    Zeitschriftenartikel

    Günther Benstetter, R. Biberger, D. Liu

    A Review of Advanced Scanning Probe Microscope Analysis of Functional Films and Semiconductor Devices

    Thin Solid Films, vol. 517, no. 17, pp. 5100-5105

    2009

    Abstract anzeigen

    This paper gives an overview of established methods and new developments in the field of Scanning Probe Microscopy (SPM) of functional films and semiconductor devices. It focuses on both, SPM analyses of passive structures and devices in operation. The contribution includes techniques such as Scanning Capacitance Microscopy (SCM) and Scanning Spreading Resistance Microscopy (SSRM) for implant mapping, Conductive AFM (C-AFM) for thin dielectrics analysis and Kelvin Probe Force Microscopy (KPFM) to study the potential distribution across active electronic devices. Finally combinations of different SPM-based techniques are described and future challenges for SPM-based techniques are discussed.

    F: Elektrotechnik und MedientechnikI: IQMA

    Zeitschriftenartikel

    M. Lanza, M. Porti, M. Nafría, X. Aymerich, Günther Benstetter, Edgar Lodermeier, Heiko Ranzinger, G. Jaschke, S. Teichert, L. Wilde, P. Michalowski

    Crystallization and silicon diffusion nanoscale effects on the electrical properties of Al2O3 based devices

    Microelectronic Engineering, vol. 86, no. 7-9, pp. 1921-1924

    2009

    Abstract anzeigen

    In this work, Atomic Force Microscopy (AFM) based techniques are used to study, at the nanoscale, the dependence of the electrical properties of Al2O3 stacks for Flash memories on the percent of diffused Silicon and material crystallization after being annealed at different temperatures.

    F: Elektrotechnik und MedientechnikI: IQMA

    Zeitschriftenartikel

    Y. Yin, D. Li, J. Gu, Z. Feng, J. Niu, Günther Benstetter, et al.

    Surface properties of silicon oxide films deposited using low pressure dielectric discharge

    Applied Surface Science, vol. 255, no. 17, pp. 7708-7712

    2009

    Abstract anzeigen

    The deposition of SiOX films from low-pressure dielectric barrier discharge plasmas has been investigated using tetraethoxysilane (TEOS)/O2 as the feed gas. Films were analyzed using X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), AFM-based nanoindentation/nanowear techniques, and conductive AFM. Film deposition rates and hydrocarbon incorporation in the SiOX film decrease with addition of O2. High-quality SiOX films with extremely low surface roughness are deposited at high oxidant concertrations. Addition of oxidant to the feed gas leads to a change in the SiOX film structure from precursor-like to a dense SiOX structure. The SiOX films deposited with TEOS/O2 plasmas were found to have soft surface layers, 0.5–1.5 nm thick, which contribute to an improvement of their field emission properties. The effect of gas phase compositions on the surface properties of the conductive surface layer was discussed.

    F: Elektrotechnik und MedientechnikI: IQMA

    Zeitschriftenartikel

    R. Biberger, Günther Benstetter, H. Göbel

    Displacement current sensor for contact and intermittent contact scanning capacitance microscopy

    Microelectronics Reliability, vol. 49, no. 1, pp. 1192-1195

    2009

    Abstract anzeigen

    In this study a displacement current capacitance sensor (DCCS) for scanning capacitance microscopy (SCM) is introduced. It can be used for both intermittent contact (IC) and contact-SCM operation. Based on I/V conversion and subsequent lock-in amplification a displacement current can be detected and used as a measure for dopant concentration. Therefore a periodic variation of the AFM tip substrate capacitance is required. This can be achieved either by a periodic tip oscillation (IC-SCM) or an applied AC voltage between tip and sample (contact-SCM). The advantage of the DCCS is the linearity, which makes it possible to detect absolute dopant concentrations.

    F: Elektrotechnik und MedientechnikI: IQMA

    Vortrag

    M. Lanza, M. Porti, M. Nafría, X. Aymerich, Günther Benstetter, et al.

    Crystallization and Silicon Diffusion Nanoscale Effects on the Electrical Properties of Al2O3 Based Devices

    Conference of Insulating Films on semiconductors (INFOS 2009), Cambridge, Großbritannien

    2009

    F: Elektrotechnik und MedientechnikI: IQMA

    Vortrag

    Günther Benstetter, R. Biberger, D. Liu

    A Review of Advanced Scanning Probe Microscope Analysis of Functional Films and Semiconductor Devices

    Invited Talk

    Thin Films, Singapur

    2008

    F: Elektrotechnik und MedientechnikI: IQMA

    Zeitschriftenartikel

    R. Biberger, Günther Benstetter, T. Schweinböck, Peter Breitschopf, H. Göbel

    Intermittent-contact scanning capacitance microscopy versus contact mode SCM applied to 2D dopant profiling

    Microelectronics Reliability, vol. 48 (8-9), pp. 1339-1349

    2008

    Abstract anzeigen

    This study compares two different methods of scanning capacitance microscopy (SCM). The first and approved one operates in contact mode and the second novel one in intermittent-contact (IC) mode. Measurements were performed on several samples and the results are compared. New technical expertises on the novel intermittent-contact method are shown and in conclusion assets and drawbacks of this SCM method are emphasized.

    F: Elektrotechnik und MedientechnikI: IQMA

    Vortrag

    Günther Benstetter

    Scanning Probe Microscopy: Analyses for Opto Semiconductors and Outlook

    Science & Coffee, Regensburg

    2008

    F: Elektrotechnik und MedientechnikI: IQMA

    Vortrag

    Günther Benstetter

    Raster-Sonden-Mikroskopie an Laser Heterostrukturen

    BMBF / VDI Fachprogramm „Optische Technologien“, Kick-Off Meeting, Regensburg

    2008

    F: Elektrotechnik und MedientechnikF: Maschinenbau und MechatronikI: IQMA

    Zeitschriftenartikel

    Werner Frammelsberger, Günther Benstetter, J. Kiely, R. Stamp

    C-AFM-based thickness determination of thin and ultra-thin SiO2 films by use of different conductive-coated probe tips

    Applied Surface Science, vol. 253, no. 7, pp. 3615-3626

    2007

    Abstract anzeigen

    The influence of the probe tip type on the electrical oxide thickness result was researched for four differently coated conductive tip types using SiO2 (oxide) films with optical thickness of 1.7–8.3 nm. For this purpose, conductive atomic force microscopy (C-AFM) was used to measure more than 7200 current–voltage (IV) curves. The electrical oxide thickness was determined on a statistical basis from the IV-curves using a recently published tunnelling model for C-AFM application. The model includes parameters associated with the probe tip types used. The evolution of the tip parameters is described in detail. For the theoretical tip parameters, measured and calculated IV-curves showed excellent agreement and the electrical oxide thickness versus the optical oxide thickness showed congruent behaviour, independent of the tip type. However, differences in the electrical oxide thickness were observed for the different tip types. The theoretical parameters were modified experimentally in order to reduce these differences. Theoretical and experimental tip parameters were compared and their effect on the differences in the electrical oxide thickness is discussed for the different tip types. Overall, it is shown that the proposed model provides a comprehensive framework for determining the electrical oxide thickness using C-AFM, for a wide range of oxide thicknesses and for differently coated conductive tips.

    F: Elektrotechnik und MedientechnikI: IQMA

    Vortrag

    Günther Benstetter

    Advanced Methods in Scanning Probe Microscopy (SPM)

    2007