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Suche nach „[Benstetter] [Günther]“ hat 151 Publikationen gefunden
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    Elektrotechnik und MedientechnikIQMA

    Vortrag

    Günther Benstetter, R. Biberger, Alexander Hofer, H. Göbel

    Intermittent-Contact Scanning Capacitance Analysis of Thin Dielectric Films and Semiconductor Devices

    Invited Talk

    5th International Conference on Technological Advances of Thin Films & Surface Coatings, Harbin, China

    2010

    Elektrotechnik und MedientechnikIQMA

    Zeitschriftenartikel

    Günther Benstetter, R. Biberger, D. Liu

    A Review of Advanced Scanning Probe Microscope Analysis of Functional Films and Semiconductor Devices

    Thin Solid Films, vol. 517, no. 17, pp. 5100-5105

    2009

    Abstract anzeigen

    This paper gives an overview of established methods and new developments in the field of Scanning Probe Microscopy (SPM) of functional films and semiconductor devices. It focuses on both, SPM analyses of passive structures and devices in operation. The contribution includes techniques such as Scanning Capacitance Microscopy (SCM) and Scanning Spreading Resistance Microscopy (SSRM) for implant mapping, Conductive AFM (C-AFM) for thin dielectrics analysis and Kelvin Probe Force Microscopy (KPFM) to study the potential distribution across active electronic devices. Finally combinations of different SPM-based techniques are described and future challenges for SPM-based techniques are discussed.

    Elektrotechnik und MedientechnikIQMA

    Zeitschriftenartikel

    M. Lanza, M. Porti, M. Nafría, X. Aymerich, Günther Benstetter, Edgar Lodermeier, Heiko Ranzinger, G. Jaschke, S. Teichert, L. Wilde, P. Michalowski

    Crystallization and silicon diffusion nanoscale effects on the electrical properties of Al2O3 based devices

    Microelectronic Engineering, vol. 86, no. 7-9, pp. 1921-1924

    2009

    Abstract anzeigen

    In this work, Atomic Force Microscopy (AFM) based techniques are used to study, at the nanoscale, the dependence of the electrical properties of Al2O3 stacks for Flash memories on the percent of diffused Silicon and material crystallization after being annealed at different temperatures.

    Elektrotechnik und MedientechnikIQMA

    Zeitschriftenartikel

    Y. Yin, D. Li, J. Gu, Z. Feng, J. Niu, Günther Benstetter, et al.

    Surface properties of silicon oxide films deposited using low pressure dielectric discharge

    Applied Surface Science, vol. 255, no. 17, pp. 7708-7712

    2009

    Abstract anzeigen

    The deposition of SiOX films from low-pressure dielectric barrier discharge plasmas has been investigated using tetraethoxysilane (TEOS)/O2 as the feed gas. Films were analyzed using X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), AFM-based nanoindentation/nanowear techniques, and conductive AFM. Film deposition rates and hydrocarbon incorporation in the SiOX film decrease with addition of O2. High-quality SiOX films with extremely low surface roughness are deposited at high oxidant concertrations. Addition of oxidant to the feed gas leads to a change in the SiOX film structure from precursor-like to a dense SiOX structure. The SiOX films deposited with TEOS/O2 plasmas were found to have soft surface layers, 0.5–1.5 nm thick, which contribute to an improvement of their field emission properties. The effect of gas phase compositions on the surface properties of the conductive surface layer was discussed.

    Elektrotechnik und MedientechnikIQMA

    Zeitschriftenartikel

    R. Biberger, Günther Benstetter, H. Göbel

    Displacement current sensor for contact and intermittent contact scanning capacitance microscopy

    Microelectronics Reliability, vol. 49, no. 1, pp. 1192-1195

    2009

    Abstract anzeigen

    In this study a displacement current capacitance sensor (DCCS) for scanning capacitance microscopy (SCM) is introduced. It can be used for both intermittent contact (IC) and contact-SCM operation. Based on I/V conversion and subsequent lock-in amplification a displacement current can be detected and used as a measure for dopant concentration. Therefore a periodic variation of the AFM tip substrate capacitance is required. This can be achieved either by a periodic tip oscillation (IC-SCM) or an applied AC voltage between tip and sample (contact-SCM). The advantage of the DCCS is the linearity, which makes it possible to detect absolute dopant concentrations.

    Elektrotechnik und MedientechnikIQMA

    Vortrag

    M. Lanza, M. Porti, M. Nafría, X. Aymerich, Günther Benstetter, et al.

    Crystallization and Silicon Diffusion Nanoscale Effects on the Electrical Properties of Al2O3 Based Devices

    Conference of Insulating Films on semiconductors (INFOS 2009), Cambridge, Großbritannien

    2009

    Elektrotechnik und MedientechnikIQMA

    Vortrag

    Günther Benstetter, R. Biberger, D. Liu

    A Review of Advanced Scanning Probe Microscope Analysis of Functional Films and Semiconductor Devices

    Invited Talk

    Thin Films, Singapur

    2008

    Elektrotechnik und MedientechnikIQMA

    Zeitschriftenartikel

    R. Biberger, Günther Benstetter, T. Schweinböck, Peter Breitschopf, H. Göbel

    Intermittent-contact scanning capacitance microscopy versus contact mode SCM applied to 2D dopant profiling

    Microelectronics Reliability, vol. 48 (8-9), pp. 1339-1349

    2008

    Abstract anzeigen

    This study compares two different methods of scanning capacitance microscopy (SCM). The first and approved one operates in contact mode and the second novel one in intermittent-contact (IC) mode. Measurements were performed on several samples and the results are compared. New technical expertises on the novel intermittent-contact method are shown and in conclusion assets and drawbacks of this SCM method are emphasized.

    Elektrotechnik und MedientechnikIQMA

    Vortrag

    Günther Benstetter

    Scanning Probe Microscopy: Analyses for Opto Semiconductors and Outlook

    Science & Coffee, Regensburg

    2008

    Elektrotechnik und MedientechnikIQMA

    Vortrag

    Günther Benstetter

    Raster-Sonden-Mikroskopie an Laser Heterostrukturen

    BMBF / VDI Fachprogramm „Optische Technologien“, Kick-Off Meeting, Regensburg

    2008

    Elektrotechnik und MedientechnikIQMAMaschinenbau und Mechatronik

    Zeitschriftenartikel

    Werner Frammelsberger, Günther Benstetter, J. Kiely, R. Stamp

    C-AFM-based thickness determination of thin and ultra-thin SiO2 films by use of different conductive-coated probe tips

    Applied Surface Science, vol. 253, no. 7, pp. 3615-3626

    2007

    Abstract anzeigen

    The influence of the probe tip type on the electrical oxide thickness result was researched for four differently coated conductive tip types using SiO2 (oxide) films with optical thickness of 1.7–8.3 nm. For this purpose, conductive atomic force microscopy (C-AFM) was used to measure more than 7200 current–voltage (IV) curves. The electrical oxide thickness was determined on a statistical basis from the IV-curves using a recently published tunnelling model for C-AFM application. The model includes parameters associated with the probe tip types used. The evolution of the tip parameters is described in detail. For the theoretical tip parameters, measured and calculated IV-curves showed excellent agreement and the electrical oxide thickness versus the optical oxide thickness showed congruent behaviour, independent of the tip type. However, differences in the electrical oxide thickness were observed for the different tip types. The theoretical parameters were modified experimentally in order to reduce these differences. Theoretical and experimental tip parameters were compared and their effect on the differences in the electrical oxide thickness is discussed for the different tip types. Overall, it is shown that the proposed model provides a comprehensive framework for determining the electrical oxide thickness using C-AFM, for a wide range of oxide thicknesses and for differently coated conductive tips.

    Elektrotechnik und MedientechnikIQMA

    Vortrag

    Günther Benstetter

    Advanced Methods in Scanning Probe Microscopy (SPM)

    2007

    Elektrotechnik und MedientechnikIQMAMaschinenbau und Mechatronik

    Vortrag

    M. Lanza, M. Porti, M. Nafría, Günther Benstetter, Werner Frammelsberger, Heiko Ranzinger, Edgar Lodermeier, G. Jaschke

    Influence of the manufacturing process on the electrical properties of thin (< 4 nm) Hafnium based high-k stacks observed with CAFM

    18th European Symposium on Reliability of Electronic Devices, Failure Physics and Analysis (ESREF), Arcachon, Frankreich

    2007

    Elektrotechnik und MedientechnikIQMA

    Zeitschriftenartikel

    S. Gsell, M. Schreck, Günther Benstetter, Edgar Lodermeier, B. Stritzker

    Combined AFM-SEM Study of the Diamond Nucleation Layer on Ir(001)

    Diamond and Related Materials, vol. 16, no. 4, pp. 665-670

    2007

    Abstract anzeigen

    During bias enhanced nucleation (BEN) of diamond on iridium the nucleation centres are gathered in discrete islands — the so called “domains”. The topographic signature of these domains has been clarified in the present study by two different concepts. First scanning electron microscopy (SEM) and atomic force microscopy (AFM) were combined to take images with both techniques of a small identical area on a standard BEN sample. In spite of the 2–3 nm deep roughening of the iridium it turned clearly out that the surface shows a 1 nm deep depression within the domains compared with the surface of the surrounding layer. On a second sample which did not show the normal roughening the domains could be identified directly from AFM images. The topographic signature of the domains was the same. Conductive AFM measurements showed that inside and outside the domains the carbon nucleation layer behaves like a high resistivity dielectric sustaining fields up to 107 V/cm. Finally, the temporal development of the domain patterns was studied by consecutive biasing steps on one sample. Depending on the local ion bombardment conditions we observed lateral growth or shrinkage on the same sample. This result suggests that domain formation is a continuous process during the whole BEN procedure starting from a local nucleation event and subsequent lateral expansion.

    Elektrotechnik und MedientechnikIQMAMaschinenbau und Mechatronik

    Zeitschriftenartikel

    M. Lanza, M. Porti, M. Nafría, Günther Benstetter, Werner Frammelsberger, Heiko Ranzinger, Edgar Lodermeier, G. Jaschke

    Influence of the manufacturing process on the electrical properties of thin (< 4 nm) Hafnium based high-k stacks observed with CAFM

    Microelectronics Reliability, vol. 47, no. 9, pp. 1424-1428

    2007

    Abstract anzeigen

    In this work, the dependence of the electrical characteristics of some thin (<4 nm) HfO2, HfSiO and HfO2/SiO2 stacks on their manufacturing process is studied at the nanoscale. Topography, current maps and current–voltage (I–V) characteristics have been collected by conductive atomic force microscope (CAFM), which show that their conductivity depends on some manufacturing parameters. Increasing the annealing temperature, physical thickness or Hafnium content makes the structure less conductive.

    Elektrotechnik und MedientechnikIQMAMaschinenbau und Mechatronik

    Vortrag

    Günther Benstetter, Werner Frammelsberger, Edgar Lodermeier, Heiko Ranzinger, D. Liu, Peter Breitschopf, W. Bergbauer, Alexander Hofer

    Raster-Sonden-Mikroskopie (SPM) in der Fehler- und Zuverlässigkeitsanalytik

    VDE Fehlermechanismen bei kleinen Geometrien, Grainau

    2006

    Elektrotechnik und MedientechnikIQMAMaschinenbau und Mechatronik

    Vortrag

    Günther Benstetter, W. Bergbauer, T. Lutz, Werner Frammelsberger

    Kelvin Probe Force Microscopy – An appropriate tool for the electrical characterisation of LED heterostructures

    17th European Symposium - Reliability of Electron Devices, Failure Physics and Analysis (ESREF) 2006, Wuppertal

    2006

    Elektrotechnik und MedientechnikIQMAMaschinenbau und Mechatronik

    Vortrag

    Günther Benstetter, Peter Breitschopf, B. Knoll, Werner Frammelsberger

    Intermittent contact scanning capacitance microscopy – An improved method for 2D doping profiling

    Nanotech Northern Europe, Helsinki, Finnland

    2006

    Elektrotechnik und MedientechnikIQMAMaschinenbau und Mechatronik

    Vortrag

    Günther Benstetter, W. Bergbauer, T. Lutz, Werner Frammelsberger

    Kelvin Probe Force Microscopy – An appropriate tool for the electrical characterisation of LED heterostructures

    Nanotech Northern Europe, Helsinki, Finnland

    2006

    Elektrotechnik und MedientechnikIQMA

    Vortrag

    S. Gsell, M. Schreck, Günther Benstetter, et al.

    Combined AFM-SEM Study of the Diamond Nucleation Layer on Ir(001)

    17th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes and Nitrides, Estoril, Portugal

    2006