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Suche nach „[2011]“ hat 310 Publikationen gefunden
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    NachhaltigAngewandte Naturwissenschaften und WirtschaftsingenieurwesenTAZ Spiegelau

    Vortrag

    Günther Ruhl, W. Lehnert, C. Wenger

    CVD grown ternary high-k oxides for MIM capacitors

    Novel High-k Applications Workshop, Dresden

    2011

    NachhaltigAngewandte Naturwissenschaften und WirtschaftsingenieurwesenTAZ Spiegelau

    Vortrag

    Günther Ruhl

    From Graphite to Graphene

    Eingeladener Vortrag

    Infineon R&D Colloquium, München

    2011

    GesundAngewandte GesundheitswissenschaftenEuropan Campus Rottal-Inn

    Zeitschriftenartikel

    E. Halliwell, H. Malson, Irmgard Tischner

    Are Contemporary Media Images Which Seem to Display Women as Sexually Empowered Actually harmful to Women?

    Psychology of Women Quarterly, vol. 35, no. 1, pp. 38-45

    2011

    GesundAngewandte GesundheitswissenschaftenEuropan Campus Rottal-Inn

    Zeitschriftenartikel

    Irmgard Tischner

    QMiP Section Conference 2010 - A Change of Tongue: A reflection

    QMiP Bulletin, vol. 11, pp. 29-31

    2011

    GesundAngewandte GesundheitswissenschaftenEuropan Campus Rottal-Inn

    Zeitschriftenartikel

    H. Malson, E. Halliwell, Irmgard Tischner, A. Rudolfsdottir

    Post-Feminist Advertising Laid Bare: Young Women’s Talk About The Sexually Agentic Woman Of "Midriff" Advertising

    Feminism & Psychology, vol. 21, no. 1, pp. 74-99

    2011

    NachhaltigAngewandte Naturwissenschaften und WirtschaftsingenieurwesenTAZ Spiegelau

    Zeitschriftenartikel

    C. Wenger, M. Lukosius, T. Blomberg, A. Abrutis, P. Baumann, Günther Ruhl

    ALD and AVD Grown Perovskite-type Dielectrics for Metal-Insulator-Metal Application

    (Invited)

    ECS Transactions (The Electrochemical Society), vol. 41, no. 2, pp. 53-61

    2011

    DOI: 10.1149/1.3633654

    Abstract anzeigen

    Atomic Vapor Deposition (AVD) and Atomic Layer Deposition (ALD) techniques were successfully applied for the depositions of perovskite type dielectrics, namely, Sr-Ta-O, Ti-Ta-O, Sr-Ti-O, Ba-Hf-O, Nb-Ta-O and Ce-Al-O. Thin films were investigated as alternative dielectrics for Metal-Insulator-Insulator (MIM) capacitors. Structural and electrical properties are investigated after depositing the metal oxides on 200 mm TiN/Si (100) substrates within the temperature range of 225-400 ºC. Electrical properties, investigated after sputtering Au top electrodes, revealed that the main characteristics are different for each dielectric. The highest dielectric constants were achieved for crystalline SrTiO3 (k=95), crystalline CeAlO3 (k = 60) and amorphous Ti-Ta-O (k = 50) films. However, Sr-Ta-O based MIM capacitors showed the lowest leakage current densities as well as the smallest capacitancevoltage linearity coefficients.

    NachhaltigAngewandte Naturwissenschaften und WirtschaftsingenieurwesenTAZ Spiegelau

    Zeitschriftenartikel

    T. Blomberg, C. Wenger, C. Baristiran Kaynak, Günther Ruhl, P. Baumann

    ALD grown NbTaOx based MIM capacitors

    Microelectronic Engineering, vol. 88, no. 8, pp. 2447-2451

    2011

    NachhaltigAngewandte Naturwissenschaften und WirtschaftsingenieurwesenTAZ Spiegelau

    Zeitschriftenartikel

    M. Lukosius, C. Baristiran Kaynak, A. Abrutis, M. Skapas, V. Kubilius, A. Zauner, Günther Ruhl, C. Wenger

    Metal-insulator-metal capacitors with MOCVD grown Ce-Al-O as dielectric

    Microelectronic Engineering, vol. 88, no. 7, pp. 1529-1532

    2011

    DOI: 10.1016/j.mee.2011.03.044

    Abstract anzeigen

    Ce–Al–O thin films were prepared on 70 nm TiN/Si(1 0 0) substrates by pulsed injection metal organic chemical vapor deposition (PI-MOCVD) for metal–insulator–metal (MIM) applications. Depositions were carried out at 400 °C using two separate Ce and Al precursors. In order to get Ce–Al–O films with different stoichiometry, Al2O3 and CeO2 were mixed with different Ce:Al precursors’ ratios. According to the XRD analysis, the as deposited films were amorphous if more aluminum was injected than cerium, and crystalline – if they are cerium rich. Electrical properties have been investigated in MIM capacitors after e-beam evaporation of Au top electrodes. Oxides possess a dielectric constant of 10–20 in combination with leakage current densities as low as 10−5 A/cm2 at −2 V. The post deposition annealing (PDA) at 600 °C and 850 °C in N2 for 5 min lead to the diffusion of Ti from TiN bottom electrode and formation of the rutile TiO2 phase. Nevertheless, CeAlO3 films were obtained if the ratio of injected Ce:Al was 1:1. The k values increased to 60 in this case, but the leakage current density worsened to 10−3 A/cm2 at −2 V.

    NachhaltigAngewandte Naturwissenschaften und WirtschaftsingenieurwesenTAZ Spiegelau

    Zeitschriftenartikel

    C. Baristiran Kaynak, M. Lukosius, B. Tillack, C. Wenger, T. Blomberg, Günther Ruhl

    Single SrTiO3 and Al2O3/SrTiO3/Al2O3 based MIM capacitors: Impact of the bottom electrode material

    Microelectronic Engineering, vol. 88, no. 7, pp. 1521-1524

    2011

    DOI: 10.1016/j.mee.2011.03.022

    Abstract anzeigen

    Metal–Insulator–Metal (MIM) capacitors with atomic layer deposited (ALD) single SrTiO3 dielectric and Al2O3/SrTiO3/Al2O3 multilayer dielectric have been deposited on TaN and TiN bottom electrodes. The MIM stacks have been analyzed and compared in terms of electrical and structural properties. The results indicate that MIMs with multilayer dielectrics provide better leakage current performance than the ones with single dielectrics while capacitance density is decreased. Additional Al2O3 layers prevented the crystallization of SrTiO3 in the multilayer dielectric stack. The decreased capacitance density in MIMs with multilayer dielectric is attributed to the amorphous structure of SrTiO3 and the series capacitance of top and bottom Al2O3 layers. Furthermore, MIM capacitors with single SrTiO3 dielectric layer on TiN electrodes indicated better capacitance density compared to the one with TaN electrodes. The lower capacitance density of the single SrTiO3 dielectric on TaN electrodes is correlated to the interfacial layer formation between SrTiO3 and TaN electrodes.

    NachhaltigAngewandte Naturwissenschaften und WirtschaftsingenieurwesenTAZ Spiegelau

    Zeitschriftenartikel

    C. Baristiran Kaynak, M. Lukosius, I. Costina, B. Tillack, C. Wenger, Günther Ruhl, T. Blomberg

    Enhanced leakage current behavior of Sr2Ta2O7-x/SrTiO3 bilayer dielectrics for metal-insulator-metal capacitors

    Thin Solid Films, vol. 519, no. 17, pp. 5734-5739

    2011

    DOI: 10.1016/j.tsf.2011.01.001

    Abstract anzeigen

    Metal–Insulator–Metal (MIM) capacitors are one of the most essential components of radio frequency devices and analog/mixed-signal integrated circuits. In order to obtain high capacitance densities in MIM devices, high-k materials have been considered to be promising candidates to replace the traditional insulators. The challenging point is that the dielectric material must demonstrate high capacitance density values with low leakage current densities. In this work, SrTiO3 based MIM capacitors have been investigated and the electrical performance of the devices have been optimized by using bilayered systems of Sr2Ta2O7−x/SrTiO3 with different thicknesses of Sr2Ta2O7−x. Sputtering X-Ray photoelectron spectroscopy (XPS) measurements have been applied to investigate the interfaces between the thin film constituents of the MIM stacks. The optimized bilayered system provides a leakage current density of 8∗10− 8 A/cm2 at 2 V (bottom electrode injection) and a high capacitance density of 13 fF/μm2.

    NachhaltigAngewandte Naturwissenschaften und WirtschaftsingenieurwesenTAZ Spiegelau

    Zeitschriftenartikel

    M. Lukosius, C. Baristiran Kaynak, C. Wenger, Günther Ruhl, S. Rushworth, P. Baumann

    Atomic Vapor Depositions of Ti–Ta–O thin films for Metal–Insulator–Metal applications

    Thin Solid Films, vol. 519, no. 11, pp. 3831-3834

    2011

    DOI: 10.1016/j.tsf.2011.01.239

    Abstract anzeigen

    Atomic Vapor Deposition technique was applied for the depositions of Ti–Ta–O oxide films for Metal–Insulator–Metal capacitors used in back-end of line for Radio Frequency applications. Composition, crystallinity, thermal stability and electrical properties were studied. Ti–Ta–O films, with the ratio of Ta/Ti ~ 1.5, deposited at 400 °C on TiN electrodes, were amorphous and possessed a dielectric constant of 50 with low voltage linearity coefficients and leakage currents densities as low as 10− 7 A/cm2 at 1 V. The films, deposited on Si wafers, were amorphous up to the annealing temperature of 700 °C and crystallized in orthorhombic Ta2O5 phase at higher temperatures.

    NachhaltigAngewandte Naturwissenschaften und WirtschaftsingenieurwesenTAZ Spiegelau

    Zeitschriftenartikel

    M. Lukosius, C. Baristiran Kaynak, C. Wenger, Günther Ruhl, S. Rushworth

    Electrical characteristics of Ti-Ta-O based MIM capacitors

    Journal of Vacuum Science & Technology B, vol. 29, no. 1

    2011

    DOI: 10.1116/1.3534020

    Abstract anzeigen

    Amorphous Ti–Ta–O thin films were deposited by the atomic-vapor deposition technique for metal-insulator-metal (MIM) applications. Depositions were carried out at 400 °C on 200-mm Si (100) wafers using TiN and TaN as bottom electrode materials. The comparison of electrical properties of MIM capacitors was done after physical-vapor deposited growth of different top electrodes, namely, Au, TiN, TaN, and Ti. Capacitance-voltage measurements revealed that the dielectric constant of 50 can be reached if Ti–Ta–O layers are deposited on TiN and if Au, TaN, or Ti is used as the top electrode. The k value is reduced to 37 if TaN is used as bottom electrode. However, if TiN is used as the top electrode, the k value of the stack is reduced by a factor of 3, from 50 to 17, independent of whether TiN or TaN are used as bottom electrodes. The lowest leakage current values (∼10−8 A/cm2) were observed when gold was used as the top electrode, whereas it increased by 3 orders of magnitude if the top electrode was changed to TiN and even more if the top electrode was changed to TaN or Ti.

    NachhaltigAngewandte Naturwissenschaften und WirtschaftsingenieurwesenEuropan Campus Rottal-Inn

    Zeitschriftenartikel

    Rui Li, H. Ninokata, M. Mori

    A numerical study of impact force caused by liquid droplet impingement onto a rigid wall

    Progress in Nuclear Energy, vol. 53, no. 7, pp. 881-885

    2011

    DOI: 10.1016/j.pnucene.2011.03.002

    Abstract anzeigen

    Liquid droplet impingement (LDI) erosion could be regarded to be one of the major causes of unexpected troubles occasionally occurred in the inner bent pipe surface. Evaluating the LDI erosion is an important topic of the thermal hydraulics and structural integrity in aging and life extension for nuclear power plants. One of the causes of LDI erosion is the impact pressure by the impingement of droplets in the involved steam. We investigated a simple droplet impingement to a rigid wall using volume of fluid (VOF) model, which is a two-phase Eulerian–Eulerian approach. The impact of a single water droplet with a high velocity towards a solid surface is examined numerically. The high Reynolds number value implies inertia dominated the phenomena and supports an inviscid approach to the problem. The high Weber number is justifying that an assumption to neglect the surface tension effect is adopted. We show that the compressibility of the liquid medium plays a dominant role in the evolution of the phenomenon. Both generation and propagation of shock waves are directly computed by solving the fluid dynamics continuity and momentum equations. In the simulation we employed a front tracking solution procedure, which is particularly suitable for two-phase free surface computation. The numerical results show that critical maximum pressure is not highest at the center of droplet contact on the surface at the first instantaneous moment but highest behind the contact angle later before jet eruption. It agrees generally well (within 20%) with the mathematical analysis. Finally, a droplet impact angle function is proposed for the global LDI erosion prediction.

    NachhaltigAngewandte Naturwissenschaften und WirtschaftsingenieurwesenEuropan Campus Rottal-Inn

    Zeitschriftenartikel

    Rui Li, M. Pellegrini, H. Ninokata, M. Mori

    A numerical study on turbulence attenuation model for liquid droplet impingement erosion

    Annals of Nuclear Energy, vol. 38, no. 6, pp. 1279-1287

    2011

    DOI: 10.1016/j.anucene.2011.02.010

    Abstract anzeigen

    The bent pipe wall thinning has been often found at the elbow of the drain line and the high-pressure secondary feed-water bent pipe in the nuclear reactors. The liquid droplet impingement (LDI) erosion could be regarded to be one of the major causes and is a significant issue of the thermal hydraulics and structural integrity in aging and life extension for nuclear power plants safety. In this paper two-phase numerical simulations are conducted for standard elbow geometry, typically the pipe diameter is 170 mm. The turbulence attenuation in vapor-droplets flow is analysed by a damping function on the energy spectrum basis of single phase flow. Considering the vapor turbulent kinetic energy attenuation due to the involved droplets, a computational fluid dynamic (CFD) tool has been adopted by using two-way vapor-droplet coupled system. This computational fluid model is built up by incompressible Reynolds Averaged Navier–Stoke equations using standard k–ε model and the SIMPLE algorithm, and the numerical droplet model adopts the Lagrangian approach, a general LDI erosion prediction procedure for bent pipe geometry has been performed to supplement the CFD code. The liquid droplets diameter, velocity, volume concentration are evaluated for the effects of carrier turbulence attenuation. The result shows that carrier turbulence kinetic energy attenuation is proved to be an important effect for LDI erosion rate when investigating the bent pipe wall thinning phenomena.

    NachhaltigAngewandte Naturwissenschaften und Wirtschaftsingenieurwesen

    Vortrag

    E. Ebel, Markus Hainthaler, E. Schlücker

    Dynamic High Pressure Treatment – Improving the Inactivation of Microorganisms and Pathogens

    6th International Commission of Agricultural and Biosystems Engineering (CIGR) 2011, Nantes, Frankreich

    2011

    GesundAngewandte Gesundheitswissenschaften

    Zeitschriftenartikel

    P. Zimmermann, T. Brückl, Agnes Nocon, A. Heck, H. Pfister, E. Binder, M. Uhr, R. Lieb, F. Holsboer, M. Ising

    Interaction of FKBP5 gene variants and adverse life events in predicting depression onset: Results from a 10-year prospective community study

    American Journal of Psychiatry, vol. 168, no. 10, pp. 1107-1116

    2011

    DOI: 10.1176/appi.ajp.2011.10111577

    Abstract anzeigen

    Objective: The binding protein FKBP5 is an important modulator of the function of the glucocorticoid receptor, the main receptor of the stress hormone system. This turns the FKBP5 gene into a key candidate for gene-environment interactions, which are considered critical for pathogenesis of stress-related disorders. The authors explored gene-environment interactions between FKBP5 gene variants and adverse life events in predicting the first occurrence of a major depressive episode. Method: The analyses were based on 884 Caucasians in a 10-year prospective community study. At baseline, they were 14–24 years old and did not fulfill criteria for a major depressive episode. The DSM-IV-based Munich Composite International Diagnostic Interview was used to assess adverse life events preceding baseline and major depressive episodes during follow-up. On the basis of previous findings, five single-nucleotide polymorphisms (SNPs) within the FKBP5 gene were selected for genotyping. Results: While the authors did not observe genetic main effects, they found interactions between the five SNPs and traumatic (but not separation) events, with the strongest effect for severe trauma. The effect of trauma on incident major depressive episodes was evident among subjects homozygous for the minor alleles but not subjects with other genotypes. The findings were replicated in the U.K. Environmental Risk Longitudinal Twin Study. Conclusions: These hypothesis-driven results suggest that an interaction between FKBP5 genotype and trauma is involved in the onset of depression. Subjects homozygous for the minor alleles of the investigated FKBP5 SNPs seem to be particularly sensitive to effects of trauma exposure in terms of triggering depression onset.

    Angewandte Gesundheitswissenschaften

    Beitrag (Sammelband oder Tagungsband)

    Marcus Herntrei, H. Pechlaner

    Spiritual Tourism–The Church as a Partner in Tourism?

    Trends and issues in global tourism 2011, Heidelberg; New York

    2011

    ISBN: 978-3-642-17767-5

    Angewandte Gesundheitswissenschaften

    Zeitschriftenartikel

    Bernhard Bleyer, T. Väth

    Orientierung an Hospitabilität und Professionalität

    Misericordia, vol. 63, no. 7

    2011

    Angewandte Gesundheitswissenschaften

    Zeitschriftenartikel

    Bernhard Bleyer

    Fixierung von dementiell erkrankten Patienten. Die ethischen Kritierien "ultima ratio" und die "Verhältnismäßigkeit der Mittel"

    Synapse, no. 2, pp. 34-36

    2011

    Angewandte Gesundheitswissenschaften

    Zeitschriftenartikel

    Bernhard Bleyer

    Rupert M. Scheule: Gut entscheiden. Eine Werterwartungstheorie theologischer Ethik

    Buchbesprechung

    Theologie und Philosophie, vol. 86, pp. 468-471

    2011