Publikationen


Suche nach „[Benstetter] [Günther]“ hat 151 Publikationen gefunden
Suchergebnis als PDF
    Elektrotechnik und MedientechnikIQMAMaschinenbau und Mechatronik

    Beitrag (Sammelband oder Tagungsband)

    Günther Benstetter, Werner Frammelsberger

    Raster-Sonden-Mikroskopie

    Analyseverfahren für die Halbleiterelektronik

    Elektrotechnik und Elektronik in Bayern, München

    Elektrotechnik und MedientechnikIQMA

    Vortrag

    Manuel Bogner, Günther Benstetter

    Determining the thermal conductivity of thin layers with the macroscopic 3ω method

    Applied Research Conference (ARC), Deggendorf

    Elektrotechnik und MedientechnikIQMA

    Vortrag

    Alexander Hofer, R. Biberger, Günther Benstetter, B. Wilke, H. Göbel

    Scanning probe microscopy based electrical characterization of thin dielectric and organic semiconductor films

    24th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Arcachon, Frankreich

    Elektrotechnik und MedientechnikIQMA

    Vortrag

    Manuel Bogner, Günther Benstetter, Alexander Hofer, H. Gruber

    The differential 3ω method for measuring the thermal conductivity of AIN and SI3N4 thin films

    16th International Conference on Thin Films (ICTF16), Dubrovnik, Kroatien

    Elektrotechnik und MedientechnikIQMAMaschinenbau und Mechatronik

    Vortrag

    Tobias Berthold, Günther Benstetter, Werner Frammelsberger, R. Rodríguez, M. Nafría

    Characterization of Self-Assembled Monolayers on Copper by Scanning Probe Microscopy

    16th International Conference on Thin Films (ICTF16), Dubrovnik, Kroatien

    Elektrotechnik und MedientechnikIQMAMaschinenbau und Mechatronik

    Vortrag

    Tobias Berthold, Günther Benstetter, Werner Frammelsberger, R. Rodríguez, M. Nafría

    Nanoscale copper oxide characterization with Kelvin Probe Force Microscopy

    Posterpräsentation

    The 7th International Conference on Technological Advances of Thin Films & Surface Coatings (THINFILMS2014), Chongquing, China

    Elektrotechnik und MedientechnikIQMA

    Vortrag

    Günther Benstetter, Alexander Hofer, Tobias Berthold

    Selected Atomic Force Microscopy Methods for the Electrical Characterization of Thin Films and Devices

    Invited Talk

    4th International Advances in Applied Physics and Materials Science Congress & Exhibition (APMAS), Fethiye, Türkei

    Elektrotechnik und MedientechnikIQMA

    Zeitschriftenartikel

    Alexander Hofer, R. Biberger, Günther Benstetter, B. Wilke, H. Göbel

    Scanning probe microscopy based electrical characterization of thin dielectric and organic semiconductor films

    Microelectronics Reliability, vol. 53, no. 9-11, pp. 1430-1433

    Abstract anzeigen

    Scanning probe microscopy (SPM) techniques offer various characterization methods for thin organic films. However, the majority of the electrical SPM measurements is currently performed in contact mode operation and may lead to severe damage at the surface of soft organic materials. This work shows the electrical characterization of organic insulator and semiconductor films by use of two SPM techniques operating with reduced lateral forces between SPM tip and sample. The first one is intermittent-contact scanning-capacitance-microscopy (IC-SCM) which is used for the detection of the local surface capacitance. The second one is torsional resonance tunneling-atomic-force-microscopy (TR-TUNA) which shows the local conductivity respectively relative film thickness of the sample. It is found that the tunneling current distribution across 50 nm thick organic insulating films is very homogeneous and that inhomogeneities in P3HT and Pentacene films can be pinpointed even if no topographical variations are observable.

    Elektrotechnik und MedientechnikIQMA

    Zeitschriftenartikel

    Alexander Hofer, Günther Benstetter, R. Biberger, C. Leirer, G. Brüderl

    Analysis of crystal defects on GaN based semiconductors with advanced scanning probe microscope technique

    Thin Solid Films, vol. 544, no. Oktober, pp. 139-143

    Abstract anzeigen

    The correlation of surface pits with leakage currents in gallium nitride (GaN) films are studied with scanning probe microscopy (SPM) techniques. The analyses were performed at both single n-GaN films grown on free-standing GaN and completely processed GaN light-emitting diode (LED) structures on sapphire substrates both grown by metal organic chemical vapor phase epitaxy. Topographical SPM images acquired with ultra-sharp probes were superimposed with current maps obtained by conductive atomic force microscopy (CAFM). The applicability of two different modifications of CAFM techniques has been studied. For both sample types, CAFM has revealed a clear correlation between forward-bias leakage current and locations of surface pits. In case of the LED structure, additional local current–voltage characteristics show that enhanced current conduction occurs in both forward and reverse bias on surface pit positions.

    Elektrotechnik und MedientechnikIQMA

    Buch (Monographie)

    Günther Benstetter

    Laserstreuung und Entladungsdiagnostik am Beschichtungsplasma eines anodischen Vakuumbogens

    Fortschritt-Berichte / VDI Fertigungstechnik, Düsseldorf, vol. Nr. 336

    ISBN: 3-18-333602-2

    Elektrotechnik und MedientechnikIQMA

    Vortrag

    Günther Benstetter

    Failure Analysis of Deep Sub-Micron Semiconductor Structures

    Elektrotechnik und MedientechnikIQMA

    Zeitschriftenartikel

    V. Iglesias, M. Lanza, K. Zhang, A. Bayerl, M. Porti, M. Nafría, X. Aymerich, Günther Benstetter, Z. Shen, G. Bersuker

    Degradation of polycrystalline HfO2 based gate dielectrics under nanoscale electrical stress

    Applied Physics Letters, vol. 99

    Abstract anzeigen

    The evolution of the electrical properties of HfO2/SiO2/Si dielectric stacks under electrical stress has been investigated using atomic force microscope-based techniques. The current through the grain boundaries (GBs), which is found to be higher than thorough the grains, is correlated to a higher density of positively charged defects at the GBs. Electrical stress produces different degradation kinetics in the grains and GBs, with a much shorter time to breakdown in the latter, indicating that GBs facilitate dielectric breakdown in high-k gate stacks.

    Elektrotechnik und MedientechnikIQMA

    Zeitschriftenartikel

    A. Bayerl, M. Lanza, M. Porti, M. Nafría, X. Aymerich, F. Campabadal, Günther Benstetter

    Nanoscale and Device Level Gate Conduction Variability of High-k Dielectrics-Based Metal-Oxide-Semiconductor Structures

    IEEE Transactions on Device and Materials Reliability, vol. 11, no. September, pp. 495-501

    DOI: 10.1109/TDMR.2011.2161087

    Abstract anzeigen

    The polycrystalline microstructure of the high-k dielectric of gate stacks in metal-oxide-semiconductor (MOS) devices can be a potential source of variability. In this paper, a conductive atomic force microscope (CAFM) and a Kelvin probe force microscope (KPFM) have been used to investigate how the thickness and the crystallization (after a thermal annealing) of the high-k layer affect the nanoscale morphological and electrical properties of the gate stack. The impact of such nanoscale properties on the reliability and variability of the global gate electrical characteristics of fully processed MOS devices has also been investigated.

    Elektrotechnik und MedientechnikIQMA

    Zeitschriftenartikel

    A. Bayerl, M. Lanza, M. Porti, F. Campabadal, M. Nafría, X. Aymerich, Günther Benstetter

    Reliability and gate conduction variability of HfO2-based MOS devices: A combined nanoscale and device level study

    Microelectronic Engineering, vol. 88, pp. 1334-1337

    Abstract anzeigen

    The electrical properties and reliability of MOS devices based on high-k dielectrics can be affected when the gate stack is subjected to an annealing process, which can lead to the polycrystallization of the high-k layer. In this work, a Conductive Atomic Force Microscope (C-AFM) has been used to study the nanoscale electrical conduction and reliability of amorphous and polycrystalline HfO2 based gate stacks. The link between the nanoscale properties and the reliability and gate conduction variability of fully processed MOS devices has also been investigated.

    Elektrotechnik und MedientechnikIQMA

    Vortrag

    Günther Benstetter

    Novel Scanning Capacitance Microscopy Techniques for Device and Thin Film Characterization

    Elektrotechnik und MedientechnikIQMA

    Vortrag

    Alexander Hofer, B. Wilke, R. Biberger, Günther Benstetter, H. Göbel

    Capacitance and Conductivity Mapping of Organic Films and Devices with Non-Contact SPM Methods

    International Workshop on Scanning Probe Microscopy for Energy Applications, Mainz

    Elektrotechnik und MedientechnikIQMA

    Vortrag

    S. Rogowsky, R. Ostendorf, G. Kaufel, W. Pletschen, J. Wagner, S. Liebich, M. Zimprich, K. Volz, W. Stolz, B. Kunert, Edgar Lodermeier, Heiko Ranzinger, Günther Benstetter

    Characteristics of diode laser structures on silicon substrates based on the Ga(NAsP)/(BGa)(AsP) materials combination

    Photonics West, San Francisco, CA, USA

    Elektrotechnik und MedientechnikIQMA

    Zeitschriftenartikel

    R. Biberger, Günther Benstetter, et al.

    Intermittent-Contact Capacitance Spectroscopy – A new method for determining C(V) curves with sub-micron lateral resolution

    Microelectronics Reliability, vol. 50, pp. 1511-1513

    Abstract anzeigen

    This study introduces a novel method to measure C(V) characteristics of local MOS structures based on scanning probe microscopy (SPM) techniques. The new method operates in intermittent-contact (IC) mode and combines both the advantages of contact mode C(V) spectroscopy and intermittent-contact scanning capacitance microscopy. As a consequence, on the one hand dopant concentration and dopant type can be indicated simultaneously, on the other hand tip wear is reduced significantly.

    Elektrotechnik und MedientechnikIQMA

    Zeitschriftenartikel

    D. Liu, J. Gu, Z. Feng, D. Li, J. Niu, Günther Benstetter

    Comparison of fluorocarbon film deposition by pulsed/continuous wave and downstream radio frequency plasmas

    Vacuum, vol. 85, no. 2, pp. 253-262

    Abstract anzeigen

    Fluorocarbon (FC) films have been deposited using pulsed and continuous wave (cw) radio frequency (rf) plasmas fed with hexafluoroethane (C2F6), octafluoropropane (C3F8), or octafluorocyclobutane (C4F8). The effects of feed gases used, discharge pressure, rf power, substrate positions and discharge modes (pulsed or cw) on the deposited films are examined. Film properties are determined using X-ray photoelectron spectroscopy, atomic force microscopy, and static contact angle measurements. The contact angles of FC films are well related to their compositions and structures. Feed gases used, discharge pressure, rf power, substrate positions and discharge modes strongly affect the morphology of the resulting film, as revealed by atomic force microscopy. Optical emission spectrometry measurements were performed to in-situ characterize the gas-phase compositions of the plasmas and radicals’ emission intensities during film deposition. Correlations between film properties, gas-phase plasma diagnostic data, and film growth processes were discussed. The film growth in pulsed or downstream plasmas was controlled by the surface migration of radicals, such as CF2 towards nucleation centers, which result in the deposition of FC films with less cross-linked nature and rougher surfaces. These results demonstrate that it is possible to control film compositions and surface structure by changing deposition parameters.

    Elektrotechnik und MedientechnikIQMA

    Zeitschriftenartikel

    J. Niu, H.-X. Ding, Y. Cong, N. Yu, Günther Benstetter, D. Liu

    Plasma-assisted chemical vapor deposition of titanium oxide films by dielectric barrier discharge

    Submitted Article

    Thin Solid Films