InformaApp - Publikationen

A transimpedance amplifier for a 40 Gbit/s optical-fibre electrical TDM system has been realised in an advanced SiGe bipolar technology. Despite its high gain (transimpedance of 2 kΩ in the limiting mode) the complete amplifier of the receiver was put on a single chip. Clear output eye diagrams at a constant (limited) output voltage swing of 0.6 Vp-p were measured at 40 Gbit/s

Elektrotechnik und Medientechnik

Patent

Werner Bogner

Takt- und Datenregenerator für hohe Datenraten

1998

Elektrotechnik und Medientechnik

Vortrag

T. Kerssenbrock, Werner Bogner, et al.

Flip-chip modules for millimeter-wave sensor applications

Microwave MTT-S International Symposium, Baltimore, MD, USA

1998

Elektrotechnik und Medientechnik

Zeitschriftenartikel

Werner Bogner, E. Gottwald, A. Schöpflin, C.-J. Weiske

40Gbit/s unrepeatered optical transmission over 148 km by electrical time division multiplexing and demultiplexing

Electronics Letters, vol. 33, no. 25, pp. 2136-2137

1997

DOI: 10.1049/el:19971468

Abstract anzeigen

Using electrical time division multiplexing and demultiplexing, a transmission experiment at 40 Gbit/s, with NRZ signals over an unrepeatered link comprising 148 km of dispersion-shifted fibre, is demonstrated for the first time. A receiver sensitivity from –22.5 to –24.2 dBm was achieved.

Elektrotechnik und Medientechnik

Zeitschriftenartikel

D. Stoll, Werner Bogner

Mit 155 Mbit/s und ATM-Technik über Funkverbindung zum Teilnehmer

Nachrichtentechnische Zeitschrift (ntz), vol. 50, no. 4, pp. 64-67

1997

Elektrotechnik und Medientechnik

Beitrag (Sammelband oder Tagungsband)

Werner Bogner, et al.

20 Gbit/s TDM nonrepeatered transmission over 198 km DSF using Si-bipolar IC for demultiplexing and clock recovery

Proceedings of the 22nd European Conference on Optical Comunication (ECOC'96)

1996

Elektrotechnik und Medientechnik

Zeitschriftenartikel

J. Freyer, W. Harth, Werner Bogner, M. Pöbl, M. Claassen

GaAs transit-time diodes for D-band frequencies

Electrical Engineering, vol. 78, pp. 257-259

1995

Abstract anzeigen

Tunneling assisted GaAs avalanche transit-time diodes with oscillation frequencies between 140 and 170 GHz are presented. The device design results in a relatively low dc-voltage of 8 Volts. A non-alloyed Schottky contact instead of an ohmic contact on highly doped GaAs reduces losses at rf-frequencies. Cw-output power of 10 mW at 142 GHz and 1.3 mW at 170 GHz are attained in fundamental mode with devices on diamond heat-sinks. The diodes show an excellent noise behaviour resulting in a noise measure of only 26.5 dB at 170 GHz.

Elektrotechnik und Medientechnik

Vortrag

J. Freyer, T. Bauer, M. Tschernitz, M. Claassen, M. Pöbl, Werner Bogner

GaAs transit‑time device structures for power generation from 100 up to 200 GHz

International Seminar on Terahertz Electronics, Darmstadt

1994

Elektrotechnik und Medientechnik

Zeitschriftenartikel

Werner Bogner

Planare GaAs‑Oszillatoren für mm‑Wellen

Archiv für Elektrotechnik, vol. 77, no. 1, pp. 11-14

1994

DOI: 10.1007/BF01574915

Abstract anzeigen

Integrierte Oszillatoren mit Lawinenlaufzeitdioden auf semiisolierendem GaAs-Substrat werden fr Frequenzen im Millimeterwellenbereich beschrieben. Die maximale Ausgangsleistung, die damit im W-Band, bei einer Frequenz von 87 GHz erreicht wird, betrgt im Dauerstrichbetrieb 10 mW. Ein integrierter Leistungsaddierer wird vorgestellt, der neben einer Erhhung der Ausgangsleistung integrierter Oszillatoren auch eine Reduzierung des Phasenrauschens ermglicht. Untersuchungen der Eigenschaften von Lawinenlaufzeitdioden als selbstmischende Oszillatoren fhren zum Einsatz dieser Bauelemente in integrierten aktiven Antennen fr Doppler-Radar-Anwendungen.Planar integrated Impatt-oscillators on semiinsulating GaAs-substrate for the mm-wave frequency range are described. In W-band, at a frequency of 87 GHz, a maximum cw output-power of 10 mW is achieved. A planar power-combiner circuit is developed, which allows an increase in output-power and reduces the phasenoise of the integrated oscillators. The investigation of the properties of Impatt-diodes as selfmixing oscillators is leading to an application of these devices in integrated active antennas for Doppler-radar.

Elektrotechnik und Medientechnik

Zeitschriftenartikel

M. Pöbl, Werner Bogner, L. Gaul

CW GaAs MITATT source on copper heatsink up to 160 GHz

Electronics Letters, vol. 30, no. 16, pp. 1316-1317

1994

Abstract anzeigen

The performance of a GaAs pn-junction transit time device with mixed tunnel-avalanche breakdown is described. At 164 GHz a CW output power of 1 mW has been achieved in the fundamental mode with devices on copper heatsink. This is to date the highest frequency achieved with CW GaAs diodes. The corresponding noise measure is 28 dB at 160 GHz

Elektrotechnik und Medientechnik

Zeitschriftenartikel

W. Harth, Werner Bogner, L. Gaul, M. Claassen

A comparative study on the noise measure of millimetre‑wave GaAs IMPATT diodes

Solid-State Electronics, vol. 37, no. 3, pp. 427-431

1994

Abstract anzeigen

It is theoretically and experimentally demonstrated that the small-signal noise measure of Gaas single-drift Impatt-diodes can efficiently be reduced by increasing the total width of the diode space-charge region due to shot-noise reduction and space-charge smoothing. For a total space-charge region width of 770 nm, a minimum noise-measure of 22 dB at 60 GHz is obtained. This value reaches almost the theoretical optimum noise measure of pin-avalanche diodes.

Elektrotechnik und Medientechnik

Beitrag (Sammelband oder Tagungsband)

Werner Bogner

Planare GaAs‑Oszillatoren für mm‑Wellen

Proceedings ITG(VDE)‑Workshop: THz/ SMMW Technology

1993

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