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Suche nach „[Benstetter] [Günther]“ hat 151 Publikationen gefunden
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    NachhaltigElektrotechnik und MedientechnikIQMAMaschinenbau und Mechatronik

    Zeitschriftenartikel

    Tobias Berthold, Günther Benstetter, Werner Frammelsberger, Manuel Bogner, R. Rodríguez, M. Nafría

    Protective nanometer films for reliable Cu-Cu connections

    Microelectronics Reliability, vol. 76-77, no. September, pp. 383-389

    DOI: 10.1016/j.microrel.2017.07.001

    NachhaltigElektrotechnik und MedientechnikIQMA

    Zeitschriftenartikel

    X. Jing, Emanuel Panholzer, X. Song, E. Grustan-Gutierrez, F. Hui, Y. Shi, Günther Benstetter, Y. Illarionov, T. Grasser, M. Lanza

    Fabrication of scalable and ultra low power photodetectors with high light/dark current ratios using polycrystalline monolayer MoS2 sheets

    Nano Energy, vol. 30, no. December, pp. 494-502

    Elektrotechnik und MedientechnikIQMA

    Vortrag

    Alexander Hofer, Tobias Berthold, A. Greppmair, M. Brandt, Günther Benstetter

    Nanoscale electrical conductivity of laser-sintered Ge nanoparticle layers

    The 8th International Conference On Technological Advances Of Thin Films and Surface Coatings (ThinFilms 2016), Singapur, Singapur

    Elektrotechnik und MedientechnikIQMA

    Vortrag

    Alexander Hofer, Tobias Berthold, A. Greppmair, Günther Benstetter, M. Brandt

    Nanoscale characterization of laser-sintered Ge nanoparticle layers

    2nd International Conference on Functional Integrated nano Systems (nanoFIS), Graz, Österreich

    NachhaltigElektrotechnik und MedientechnikIQMA

    Zeitschriftenartikel

    H. Fan, Y. You, W. Ni, Q. Yang, L. Liu, Günther Benstetter, D. Liu, C. Liu

    Surface degeneration of W crystal irradiated with low-energy hydrogen ions

    Scientific Reports (Nature Publishing Group), vol. 6, no. Article number: 23738

    DOI: 10.1038/srep23738

    Abstract anzeigen

    The damage layer of a W (100) crystal irradiated with 120 eV hydrogen ions at a fluence of up to 1.5 × 1025/m2 was investigated by scanning electron microscopy and conductive atomic force microscopy (CAFM). The periodic surface degeneration of the W crystal at a surface temperature of 373 K was formed at increasing hydrogen fluence. Observations by CCD camera and CAFM indicate the existence of ultrathin surface layers due to low-energy H irradiation. The W surface layer can contain a high density of nanometer-sized defects, resulting in the thermal instability of W atoms in the surface layer. Our findings suggest that the periodic surface degeneration of the W crystal can be ascribed to the lateral erosion of W surface layers falling off during the low-energy hydrogen irradiation. Our density functional theory calculations confirm the thermal instability of W atoms in the top layer, especially if H atoms are adsorbed on the surface.

    NachhaltigElektrotechnik und MedientechnikIQMA

    Zeitschriftenartikel

    L. Liu, D. Liu, Y. Hong, H. Fan, W. Ni, Q. Yang, Z. Bi, Günther Benstetter, S. Li

    High-flux He+ irradiation effects on surface damages of tungsten under ITER relevant conditions

    Journal of Nuclear Materials, vol. 471, no. April, pp. 1-7

    DOI: 10.1016/j.jnucmat.2016.01.001

    Abstract anzeigen

    A large-power inductively coupled plasma source was designed to perform the continuous helium ions (He+) irradiations of polycrystalline tungsten (W) under International Thermonuclear Experimental Reactor (ITER) relevant conditions. He+ irradiations were performed at He+ fluxes of 2.3 × 1021–1.6 × 1022/m2 s and He+ energies of 12–220 eV. Surface damages and microstructures of irradiated W were observed by scanning electron microscopy. This study showed the growth of nano-fuzzes with their lengths of 1.3–2.0 μm at He+ energies of >70 eV or He+ fluxes of >1.3 × 1022/m2 s. Nanometer-sized defects or columnar microstructures were formed in W surface layer due to low-energy He+ irradiations at an elevated temperature (>1300 K). The diffusion and coalescence of He atoms in W surface layers led to the growth and structures of nano-fuzzes. This study indicated that a reduction of He+ energy below 12–30 eV may greatly decrease the surface damage of tungsten diverter in the fusion reactor.

    NachhaltigElektrotechnik und MedientechnikIQMA

    Zeitschriftenartikel

    Y. Ji, H. Fei, Y. Shi, V. Igelsias, D. Lewis, N. Jiebin, S. Long, M. Liu, Alexander Hofer, Werner Frammelsberger, Günther Benstetter, A. Scheuermann, P. McIntyre, M. Lanza

    Characterization of the photocurrents generated by the laser of atomic force microscopes

    Review of Scientific Instruments, vol. 87, no. 8

    DOI: 10.1063/1.4960597

    Abstract anzeigen

    The conductive atomic force microscope (CAFM) has become an essential tool for the nanoscale electronic characterization of many materials and devices. When studying photoactive samples, the laser used by the CAFM to detect the deflection of the cantilever can generate photocurrents that perturb the current signals collected, leading to unreliable characterization. In metal-coated semiconductor samples, this problem is further aggravated, and large currents above the nanometer range can be observed even without the application of any bias. Here we present the first characterization of the photocurrents introduced by the laser of the CAFM, and we quantify the amount of light arriving to the surface of the sample. The mechanisms for current collection when placing the CAFM tip on metal-coated photoactive samples are also analyzed in-depth. Finally, we successfully avoided the laser-induced perturbations using a two pass technique: the first scan collects the topography (laser ON) and the second collects the current (laser OFF). We also demonstrate that CAFMs without a laser (using a tuning fork for detecting the deflection of the tip) do not have this problem.

    NachhaltigElektrotechnik und MedientechnikIQMA

    Vortrag

    K. Schiebl, Alexander Hofer, Günther Benstetter

    Atomic Force Microscopy analysis of laser-sintered Germanium nanoparticles for thermoelectric applications

    3rd International Congress on Energy Efficiency and Energy Related Materials (ENEFM), Oludeniz, Türkei

    NachhaltigElektrotechnik und MedientechnikIQMA

    Vortrag

    Günther Benstetter, Alexander Hofer, A. Greppmair, M. Brandt

    A review of physical characterization methods for nanostructured thermoelectric materials

    Invited Talk

    3rd International Congress on Energy Efficiency and Energy Related Materials (ENEFM), Oludeniz, Türkei

    NachhaltigElektrotechnik und MedientechnikIQMA

    Zeitschriftenartikel

    Q. Yang, Y.-W. You, L. Liu, H. Fan, W. Ni, D. Liu, C. Liu, Günther Benstetter, Y. Wang

    Nanostructured fuzz growth on tungsten under low-energy and high-flux He irradiation

    Scientific Reports (Nature Publishing Group), vol. 5, no. Article number: 10959, pp. 1-9

    DOI: 10.1038/srep10959

    NachhaltigElektrotechnik und MedientechnikIQMA

    Zeitschriftenartikel

    W. Ni, Q. Yang, H. Fan, L. Liu, Tobias Berthold, Günther Benstetter, D. Liu

    Ordered arrangement of irradiation-induced defects of polycrystalline tungsten irradiated with low-energy hydrogen ions

    Journal of Nuclear Materials, vol. 464, pp. 216-220

    NachhaltigElektrotechnik und MedientechnikIQMA

    Zeitschriftenartikel

    Q. Yang, H. Fan, W. Ni, L. Liu, Tobias Berthold, Günther Benstetter, D. Liu, Y. Wang

    Observation of interstitial loops in He+ irradiated W by conductive atomic force microscopy

    Acta Materialia, vol. 92, pp. 178-188

    NachhaltigElektrotechnik und MedientechnikIQMA

    Zeitschriftenartikel

    Tobias Berthold, Günther Benstetter, Werner Frammelsberger, R. Rodríguez, M. Nafría

    Nanoscale characterization of CH3-terminated Self-Assembled Monolayer on copper by advanced scanning probe microscopy techniques

    Applied Surface Science, vol. 356, pp. 921-926

    DOI: 10.1016/j.apsusc.2015.08.182

    Abstract anzeigen

    In this study, we used Self-Assembled Monolayer (SAM) with CH3 end-group molecules to protect copper surfaces from oxidation and investigated at nanometer scale the integrity and temperature stability of the protective film. The films were characterized by dynamic Chemical Force Microscopy (dCFM), Torsional Resonance Tunneling Atomic Force Microscopy (TR-TUNA) and Attenuated Total Reflection Fourier Transform Infrared Spectroscopy (ATR-FTIR). We observed that temperature stress degraded local properties of our SAM films significantly, when compared to unstressed films. After temperature stress at 100 °C, tunneling current increased and hydrophobicity decreased substantially. In combination with the ATR-FTIR results we assigned local high current spots and local hydrophobic variations to cuprous oxide (Cu2O). After temperature stress at 150 °C, the measurements indicate a decomposition of the SAM film and a further oxidation of the copper surface. In addition, the results show that dynamic dCFM and TR-TUNA are appropriate tools to characterize SAM films structurally, chemically and electrically. Most important, in contrast to conventional contact mode Atomic Force Microscopy techniques, we did not observe any damage to the SAM film by dCFM and TR-TUNA measurements.

    NachhaltigElektrotechnik und MedientechnikIQMA

    Zeitschriftenartikel

    Manuel Bogner, Alexander Hofer, Günther Benstetter, H. Gruber, R.Y.Q. Fu

    Differential 3ω method for measuring thermal conductivity of AIN and SI3N4 thin films

    Thin Solid Films, vol. 591 Part B, pp. 267-270

    DOI: 10.1016/j.tsf.2015.03.031

    Abstract anzeigen

    The thermal conductivity λ of plasma enhanced chemical vapor deposited Si3N4 and sputtered AlN thin films deposited on silicon substrates were obtained utilizing the differential 3ω method. A thin electrically conductive strip was deposited onto the investigated thin film of interest, and used as both a heater and a temperature sensor. To study the thickness dependent thermal conductivity of AlN and Si3N4 films their thickness was varied from 300 to 1000 nm. Measurements were performed at room temperature at a chamber pressure of 3.1 Pa. The measured thermal conductivity values of AlN and Si3N4 thin films were between 5.4 and 17.6 Wm− 1 K− 1 and 0.8 up to 1.7 Wm− 1 K− 1, respectively. The data were significantly smaller than that of the bulk materials found in literature (i.e., λAlN = 250–285 Wm− 1 K− 1, λSi3N4 = 30 Wm− 1 K− 1), due to the scaling effects, and also strongly dependent on film thickness, but were comparable with literature for the corresponding thin films.

    NachhaltigElektrotechnik und MedientechnikIQMA

    Zeitschriftenartikel

    L. Hamann, Günther Benstetter, Alexander Hofer, M. Mattheis, M. Haas, R. Zapf-Gottwick

    Use of Coated-Metal Particles in Rear Busbar Pastes to Reduce Silver Consumption

    IEEE Journal of Photovoltaics, vol. 5, no. 2, pp. 534-537

    DOI: 10.1109/JPHOTOV.2014.2388080

    Abstract anzeigen

    Reducing the amount of silver is one of the most important ways to reduce the cost of photovoltaic cells. The common way to reduce silver consumption on a cell is the reduction of the metal content in the paste. We present a new paste with silver-coated nickel particles, reducing the silver amount and still keeping the properties of silver related to oxidation and sintering. This paper shows the limits in conductivity due to porosity and oxidation of coated-metal particle pastes in comparison with silver pastes. Simulations and cell tests show that coated-metal particle pastes reduce silver consumption without decreasing the cell efficiency replacing busbar pastes. Coated-metal particle pastes are able to decrease silver consumption for rear-side busbars to c Ag <; 1.4 mg/cm 2 , leading to a conductivity σ BB = 1.110 5 S/cm, without decreasing cell or module efficiency. The conductivity of coated-metal particle pastes is too low using pastes with coated-metal particles as a replacement for the metallization paste for grid fingers but good enough to replace the silver paste for busbars with a cheap alternative.

    NachhaltigElektrotechnik und MedientechnikIQMA

    Zeitschriftenartikel

    Tobias Berthold, Günther Benstetter, Werner Frammelsberger, R. Rodríguez, M. Nafría

    Nanoscale characterization of copper oxide films by Kelvin Probe Force Microscopy

    Thin Solid Films, vol. 584, no. June 2015, pp. 310-315

    DOI: 10.1016/j.tsf.2015.01.071

    Abstract anzeigen

    In this work Peakforce Kelvin Probe Force Microscopy (PF-KPFM) at ambient environment is used to characterize both oxidation states of copper (Cu) surfaces, cupric oxide CuO and cuprous oxide Cu2O, with high lateral resolution. Characteristic values of the contact potential difference were obtained for the copper oxide states. By this means, PF-KPFM measurements enabled to distinguish between the different types of Cu oxide with nanometer resolution and to correlate the oxidation states to local topography features. It was even possible to identify single oxide grains on top of the Cu surface. As a result, PF-KPFM is able to address the needs for nanoscale characterization methods in semiconductor manufacturing or other related technologies where the local oxidation behavior of copper is a critical issue.

    Elektrotechnik und MedientechnikIQMAMaschinenbau und Mechatronik

    Vortrag

    Werner Frammelsberger, Günther Benstetter, et al.

    Atomic Force Microscopy Studies of Thin and Ultra-Thin SiO2 Films and Interfaces

    Elektrotechnik und MedientechnikIQMA

    Zeitschriftenartikel

    Günther Benstetter, R. Biberger, D. Liu

    A Review of Advanced Scanning Probe Microscope Analysis of Functional Films and Semiconductor Devices

    Thin Solid Films, vol. 517, no. 17, pp. 5100-5105

    Abstract anzeigen

    This paper gives an overview of established methods and new developments in the field of Scanning Probe Microscopy (SPM) of functional films and semiconductor devices. It focuses on both, SPM analyses of passive structures and devices in operation. The contribution includes techniques such as Scanning Capacitance Microscopy (SCM) and Scanning Spreading Resistance Microscopy (SSRM) for implant mapping, Conductive AFM (C-AFM) for thin dielectrics analysis and Kelvin Probe Force Microscopy (KPFM) to study the potential distribution across active electronic devices. Finally combinations of different SPM-based techniques are described and future challenges for SPM-based techniques are discussed.

    Elektrotechnik und MedientechnikIQMAMaschinenbau und Mechatronik

    Vortrag

    Tobias Berthold, Günther Benstetter, Werner Frammelsberger, R. Rodríguez, M. Nafría, Raimund Förg

    Analysis of copper oxide films by combined scanning microscopy

    6th International Conference on Technological Advances of Thin Films & Surface Coatings (THINFILMS2012), Singapur, Singapur

    Elektrotechnik und MedientechnikIQMA

    Vortrag

    Alexander Hofer, Günther Benstetter, R. Biberger, C. Leirer, G. Brüderl

    Analysis of crystal defects on GaN-based semiconductors with advanced scanning probe microscope techniques

    Invited Talk

    6th International Conference on Technological Advances of Thin Films & Surface Coatings (THINFILMS2012), Singapur, Singapur