Suche nach „[J.] [Michalicka]“ hat 1 Publikationen gefunden
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    NachhaltigF: Elektrotechnik und MedientechnikI: IQMA


    L. Liu, S. Li, D. Liu, Günther Benstetter, O. Man, J. Michalicka, Y. Zhang, Y. Hong, H. Fan, W. Ni, Q. Yang, Y. Wu, Z. Bi

    The effect of O2 impurity on surface morphology of polycrystalline W during low-energy and high-flux He+ irradiation

    Fusion Engineering and Design, vol. 139, pp. 96-103


    DOI: 10.1016/j.fusengdes.2019.01.003

    Abstract anzeigen

    The interaction between the impurities (such as carbon, nitrogen, oxygen) and the plasma-facing materials (PFMs) can profoundly influence the performance and service of the PFMs. In this paper, we investigated the influence of oxygen (O2) impurity in the helium radio frequency (RF) plasma on the surface morphology of polycrystalline tungsten (W) irradiated at the surface temperature of 1450 ± 50 K and the ion energy of 100 eV. The pressure ratio of O2 to He (R) in RF source varied from 4.0 × 10−6 to 9.0 × 10-2. The total irradiation flux and fluence were ˜1.2 × 1022 ions·m-2·s-1 and ˜1.0 × 1026 ions·m-2, respectively. After He+ irradiation, the specimen surface morphology was observed by scanning electron microscopy. It was found that with increasing R from 4.0 × 10−6 to 9.0 × 10-2 the thickness of nano-fuzz layer at the W surface was thinner and thinner, accompanied by the formation of rod-like structures. The erosion yield increased from 5.2 × 10-4 to 2.3 × 10-2 W/ion when R varied from 4.0 × 10-6 to 9.0 × 10-2. The X-ray diffraction analysis shows that tungsten oxides were formed at the near surface of specimens when R exceeded 1.8 × 10-2. The erosion yield measurements revealed that in addition to surface physical sputtering process, the chemical erosion process could occur due to the interaction between oxygen-containing species and W at the surface. The results indicated that the presence of O2 impurity in He plasma can obviously affect the surface microstructure of W. The study suggested that O2 impurity can effectively reduce the growth of nano-fuzz structures.