F: Elektrotechnik und MedientechnikI: IQMAZeitschriftenartikel
M. Lanza, M. Porti, M. Nafría, X. Aymerich, Günther Benstetter, Edgar Lodermeier, Heiko Ranzinger, G. Jaschke, S. Teichert, L. Wilde, P. Michalowski
Conductivity and Charge Trapping After Electrical Stress in Amorphous and Polycrystalline Al2O3-Based Devices Studied With AFM-Related Techniques
IEEE Transactions on Nanotechnology, vol. 10, no. 2, pp. 344-351
2011
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In this paper, atomic force microscopy-based techniques have been used to study, at nanoscale, the dependence of the electrical properties of Al2O3 stacks for flash memories on the annealing temperature (T-A). The electrical characterization has been combined with other techniques (for example, transmission electron microscopy) that have allowed to investigate the dependence of the stack crystallization and the Si diffusion from the substrate to the gate oxide on T-A. The combination of both the analyses has allowed to explore if there is a relation between the percentage of diffused silicon and material crystallization with the conductivity and charge trapping of Al2O3 stacks.
F: Elektrotechnik und MedientechnikI: IQMAZeitschriftenartikel
M. Lanza, M. Porti, M. Nafría, X. Aymerich, Günther Benstetter, Edgar Lodermeier, Heiko Ranzinger, G. Jaschke, S. Teichert, L. Wilde, P. Michalowski
Crystallization and silicon diffusion nanoscale effects on the electrical properties of Al2O3 based devices
Microelectronic Engineering, vol. 86, no. 7-9, pp. 1921-1924
2009
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In this work, Atomic Force Microscopy (AFM) based techniques are used to study, at the nanoscale, the dependence of the electrical properties of Al2O3 stacks for Flash memories on the percent of diffused Silicon and material crystallization after being annealed at different temperatures.
F: Elektrotechnik und MedientechnikF: Maschinenbau und MechatronikI: IQMAVortrag
M. Lanza, M. Porti, M. Nafría, Günther Benstetter, Werner Frammelsberger, Heiko Ranzinger, Edgar Lodermeier, G. Jaschke
Influence of the manufacturing process on the electrical properties of thin (< 4 nm) Hafnium based high-k stacks observed with CAFM
18th European Symposium on Reliability of Electronic Devices, Failure Physics and Analysis (ESREF), Arcachon, Frankreich
2007
F: Elektrotechnik und MedientechnikF: Maschinenbau und MechatronikI: IQMAZeitschriftenartikel
M. Lanza, M. Porti, M. Nafría, Günther Benstetter, Werner Frammelsberger, Heiko Ranzinger, Edgar Lodermeier, G. Jaschke
Influence of the manufacturing process on the electrical properties of thin (< 4 nm) Hafnium based high-k stacks observed with CAFM
Microelectronics Reliability, vol. 47, no. 9, pp. 1424-1428
2007
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In this work, the dependence of the electrical characteristics of some thin (<4 nm) HfO2, HfSiO and HfO2/SiO2 stacks on their manufacturing process is studied at the nanoscale. Topography, current maps and current–voltage (I–V) characteristics have been collected by conductive atomic force microscope (CAFM), which show that their conductivity depends on some manufacturing parameters. Increasing the annealing temperature, physical thickness or Hafnium content makes the structure less conductive.
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