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F: Elektrotechnik und MedientechnikI: IQMA
Degradation of polycrystalline HfO2 based gate dielectrics under nanoscale electrical stress
Applied Physics Letters, vol. 99
The evolution of the electrical properties of HfO2/SiO2/Si dielectric stacks under electrical stress has been investigated using atomic force microscope-based techniques. The current through the grain boundaries (GBs), which is found to be higher than thorough the grains, is correlated to a higher density of positively charged defects at the GBs. Electrical stress produces different degradation kinetics in the grains and GBs, with a much shorter time to breakdown in the latter, indicating that GBs facilitate dielectric breakdown in high-k gate stacks.