Suche nach „[Z.] [Feng]“ hat 2 Publikationen gefunden

F: Elektrotechnik und MedientechnikI: IQMA

Zeitschriftenartikel

D. Liu, J. Gu, Z. Feng, D. Li, J. Niu, Günther Benstetter

Comparison of fluorocarbon film deposition by pulsed/continuous wave and downstream radio frequency plasmas

Vacuum, vol. 85, no. 2, pp. 253-262

2010

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Fluorocarbon (FC) films have been deposited using pulsed and continuous wave (cw) radio frequency (rf) plasmas fed with hexafluoroethane (C2F6), octafluoropropane (C3F8), or octafluorocyclobutane (C4F8). The effects of feed gases used, discharge pressure, rf power, substrate positions and discharge modes (pulsed or cw) on the deposited films are examined. Film properties are determined using X-ray photoelectron spectroscopy, atomic force microscopy, and static contact angle measurements. The contact angles of FC films are well related to their compositions and structures. Feed gases used, discharge pressure, rf power, substrate positions and discharge modes strongly affect the morphology of the resulting film, as revealed by atomic force microscopy. Optical emission spectrometry measurements were performed to in-situ characterize the gas-phase compositions of the plasmas and radicals’ emission intensities during film deposition. Correlations between film properties, gas-phase plasma diagnostic data, and film growth processes were discussed. The film growth in pulsed or downstream plasmas was controlled by the surface migration of radicals, such as CF2 towards nucleation centers, which result in the deposition of FC films with less cross-linked nature and rougher surfaces. These results demonstrate that it is possible to control film compositions and surface structure by changing deposition parameters.

F: Elektrotechnik und MedientechnikI: IQMA

Zeitschriftenartikel

Y. Yin, D. Li, J. Gu, Z. Feng, J. Niu, Günther Benstetter, et al.

Surface properties of silicon oxide films deposited using low pressure dielectric discharge

Applied Surface Science, vol. 255, no. 17, pp. 7708-7712

2009

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The deposition of SiOX films from low-pressure dielectric barrier discharge plasmas has been investigated using tetraethoxysilane (TEOS)/O2 as the feed gas. Films were analyzed using X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), AFM-based nanoindentation/nanowear techniques, and conductive AFM. Film deposition rates and hydrocarbon incorporation in the SiOX film decrease with addition of O2. High-quality SiOX films with extremely low surface roughness are deposited at high oxidant concertrations. Addition of oxidant to the feed gas leads to a change in the SiOX film structure from precursor-like to a dense SiOX structure. The SiOX films deposited with TEOS/O2 plasmas were found to have soft surface layers, 0.5–1.5 nm thick, which contribute to an improvement of their field emission properties. The effect of gas phase compositions on the surface properties of the conductive surface layer was discussed.