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Suche nach „[X.] [Jing]“ hat 3 Publikationen gefunden
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    NachhaltigElektrotechnik und MedientechnikIQMA

    Zeitschriftenartikel

    C. Wen, X. Jing, F. Hitzel, C. Pan, Günther Benstetter, M. Lanza

    In Situ Observation of Current Generation in ZnO Nanowire Based Nanogenerators Using a CAFM Integrated into an SEM

    ACS Applied Materials & Interfaces, vol. 11, no. 17, pp. 15183-15188

    2019

    DOI: 10.1021/acsami.9b00447

    Abstract anzeigen

    In this work, we monitor in situ the movement of ZnO piezoelectric nanowires by using a conductive atomic force microscope integrated into a scanning electron microscope. This setup allows seeing the bending of the nanowires and simultaneously measuring the currents generated. We conclude that the currents generated not only come from piezoelectric effect, but also from contact potential and triboelectric effect. These contributions have been ignored in all previous reports in this field, meaning that the power conversion efficiency of these devices may have been systematically overestimated. Our study helps to clarify the working mechanism of piezoelectric nanogenerators based on ZnO nanowires.

    NachhaltigElektrotechnik und MedientechnikIQMA

    Zeitschriftenartikel

    S. Chen, L. Jiang, M. Buckwell, X. Jing, Y. Ji, E. Grustan-Gutierrez, Günther Benstetter, F. Hui, Y. Shi, M. Rommel, A. Paskaleva, W. Ng, A. Mehonic, A. Kenyon, M. Lanza

    On the Limits of Scalpel AFM for the 3D Electrical Characterization of Nanomaterials

    Advanced Functional Materials, vol. 28, no. 52

    2018

    DOI: 10.1002/adfm.201802266

    Abstract anzeigen

    Conductive atomic force microscopy (CAFM) has been widely used for electrical characterization of thin dielectrics by applying a gentle contact force that ensures a good electrical contact without inducing additional high‐pressure related phenomena (e.g., flexoelectricity, local heat, scratching). Recently, the CAFM has been used to obtain 3D electrical images of thin dielectrics by etching their surface. However, the effect of the high contact forces/pressures applied during the etching on the electrical properties of the materials has never been considered. By collecting cross‐sectional transmission electron microscopy images at the etched regions, it is shown here that the etching process can modify the morphology of Al2O3 thin films (producing phase change, generation of defects, and metal penetration). It is also observed that this technique severely modifies the electrical properties of pSi and TiO2 wafers during the etching, and several behaviors ignored in previous studies, including i) observation of high currents in the absence of bias, ii) instabilities of etching rate, and iii) degradation of CAFM tips, are reported. Overall, this work should contribute to understand better the limitations of this technique and disseminate it among those applications in which it can be really useful.

    NachhaltigElektrotechnik und MedientechnikIQMA

    Zeitschriftenartikel

    X. Jing, Emanuel Panholzer, X. Song, E. Grustan-Gutierrez, F. Hui, Y. Shi, Günther Benstetter, Y. Illarionov, T. Grasser, M. Lanza

    Fabrication of scalable and ultra low power photodetectors with high light/dark current ratios using polycrystalline monolayer MoS2 sheets

    Nano Energy, vol. 30, no. December, pp. 494-502

    2016

    DOI: 10.1016/j.nanoen.2016.10.032