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    NachhaltigAngewandte Naturwissenschaften und WirtschaftsingenieurwesenTAZ Spiegelau


    M. Lukosius, C. Baristiran Kaynak, A. Abrutis, M. Skapas, V. Kubilius, A. Zauner, Günther Ruhl, C. Wenger

    Metal-insulator-metal capacitors with MOCVD grown Ce-Al-O as dielectric

    Microelectronic Engineering, vol. 88, no. 7, pp. 1529-1532


    DOI: 10.1016/j.mee.2011.03.044

    Abstract anzeigen

    Ce–Al–O thin films were prepared on 70 nm TiN/Si(1 0 0) substrates by pulsed injection metal organic chemical vapor deposition (PI-MOCVD) for metal–insulator–metal (MIM) applications. Depositions were carried out at 400 °C using two separate Ce and Al precursors. In order to get Ce–Al–O films with different stoichiometry, Al2O3 and CeO2 were mixed with different Ce:Al precursors’ ratios. According to the XRD analysis, the as deposited films were amorphous if more aluminum was injected than cerium, and crystalline – if they are cerium rich. Electrical properties have been investigated in MIM capacitors after e-beam evaporation of Au top electrodes. Oxides possess a dielectric constant of 10–20 in combination with leakage current densities as low as 10−5 A/cm2 at −2 V. The post deposition annealing (PDA) at 600 °C and 850 °C in N2 for 5 min lead to the diffusion of Ti from TiN bottom electrode and formation of the rutile TiO2 phase. Nevertheless, CeAlO3 films were obtained if the ratio of injected Ce:Al was 1:1. The k values increased to 60 in this case, but the leakage current density worsened to 10−3 A/cm2 at −2 V.