Suche nach „[V.] [Buck]“ hat 2 Publikationen gefunden

NachhaltigAngewandte Naturwissenschaften und Wirtschaftsingenieurwesen

Zeitschriftenartikel

P. Barhai, R. Sharma, A. Yadav, A. Singh, Himani Jain, V. Buck

Surface modification of PMMA with DLC using RF-PECVD

ECS Transactions (The Electrochemical Society), vol. 25 (216th ECS Meeting, Vienna, Austria), no. 8, pp. 829-836

DOI: 10.1149/1.3207673

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DLC films are deposited on PMMA substrates using Radio Frequency Plasma Enhanced Chemical Vapour Deposition (RF-PECVD) technique with the variation of RF power at a constant pressure of 5 × 10-2 mbar. Acetylene diluted with argon is used as a precursor for the deposition of DLC films. No external heating is provided during deposition. Deposited films are characterized using Raman spectroscopy, FTIR spectroscopy, Optical contact angle (OCA) technique and AFM. Raman spectra shows a G peak near 1550 cm-1 and a D peak near 1320 cm-1. FTIR spectra shows a peak near 2900 cm-1 corresponding to C-H stretching modes and peaks below 2000 cm-1 corresponding to C-C modes and C-H bending modes. Surface morphology of the films has been studied with AFM and the result shows the formation of uniform films. Optical contact angle (OCA) shows that DLC coated PMMA is more hydrophobic compared to uncoated surface.

NachhaltigAngewandte Naturwissenschaften und Wirtschaftsingenieurwesen

Zeitschriftenartikel

Himani Jain, H. Karacuban, D. Krix, H.-W. Becker, H. Nienhaus, V. Buck

Carbon nanowalls deposited by inductively coupled plasma enhanced chemical vapor deposition using aluminum acetylacetonate as precursor

Carbon, vol. 49, no. 15, pp. 4987-4995

DOI: 10.1016/j.carbon.2011.07.002

Abstract anzeigen

Well aligned carbon nanowalls, a few nanometers thick, were fabricated by continuous flow of aluminum acetylacetonate (Al(acac)3) without a catalyst, and independent of substrate material. The nanowalls were grown on Si, and steel substrates using inductively coupled plasma-enhanced chemical vapor deposition. Deposition parameters like flow of argon gas and substrate temperature were correlated with the growth of carbon nanowalls. For a high flow of argon carrier gas, an increased amount of aluminum in the film and a reduced lateral size of the carbon walls were found. The aluminum is present inside the carbon nanowall matrix in the form of well crystallized nanosized Al4C3 precipitates.