Suche nach „[T.] [Schweinböck]“ hat 11 Publikationen gefunden

F: Elektrotechnik und MedientechnikI: IQMA

Zeitschriftenartikel

R. Biberger, Günther Benstetter, T. Schweinböck, Peter Breitschopf, H. Göbel

Intermittent-contact scanning capacitance microscopy versus contact mode SCM applied to 2D dopant profiling

Microelectronics Reliability, vol. 48 (8-9), pp. 1339-1349

2008

Abstract anzeigen

This study compares two different methods of scanning capacitance microscopy (SCM). The first and approved one operates in contact mode and the second novel one in intermittent-contact (IC) mode. Measurements were performed on several samples and the results are compared. New technical expertises on the novel intermittent-contact method are shown and in conclusion assets and drawbacks of this SCM method are emphasized.

F: Elektrotechnik und MedientechnikF: Maschinenbau und MechatronikI: IQMA

Vortrag

T. Schweinböck, S. Schömann, D. Alvarez, M. Buzzu, Günther Benstetter, Werner Frammelsberger, Peter Breitschopf

New Trends in the application of scanning probe techniques in failure analysis

15th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Zürich, Schweiz

2004

F: Elektrotechnik und MedientechnikF: Maschinenbau und MechatronikI: IQMA

Vortrag

Günther Benstetter, Peter Breitschopf, Werner Frammelsberger, Heiko Ranzinger, P. Reislhuber, T. Schweinböck

AFM-based scanning capacitance techniques for deep sub-micron semiconductor failure analysis

15th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Zürich, Schweiz

2004

F: Elektrotechnik und MedientechnikF: Maschinenbau und MechatronikI: IQMA

Zeitschriftenartikel

Werner Frammelsberger, Günther Benstetter, R. Stamp, J. Kiely, T. Schweinböck

Simplified tunnelling current calculation for MOS structures with ultra-thin oxides for Conductive Atomic Force Microscopy investigations

Materials Science & Engineering B, vol. 116, no. 2, pp. 168-174

2004

DOI: 10.1016/j.mseb.2004.09.027

Abstract anzeigen

As charge tunnelling through thin and ultra-thin silicon dioxide layers is regarded as the driving force for MOS device degradation the determination and characterisation of electrically week spots is of paramount importance for device reliability and failure analysis. Conductive atomic force microscopy (C-AFM) is able to address this issue with a spatial resolution smaller than the expected breakdown spot. For the determination of the electrically active oxide thickness in practice an easy to use model with sufficient accuracy and which is largely independent of the oxide thickness is required. In this work a simplified method is presented that meets these demands. The electrically active oxide thickness is determined by matching of C-AFM voltage–current curves and a tunnelling current model, which is based on an analytical tunnelling current approximation. The model holds for both the Fowler–Nordheim tunnelling and the direct tunnelling regime with one single tunnelling parameter set. The results show good agreement with macroscopic measurements for gate voltages larger than approximately 0.5–1 V, and with microscopic C-AFM measurements. For this reason arbitrary oxides in the DT and the FNT regime may be analysed with high lateral resolution by C-AFM, without the need of a preselection of the tunnelling regime to be addressed.

F: Elektrotechnik und MedientechnikF: Maschinenbau und MechatronikI: IQMA

Zeitschriftenartikel

Günther Benstetter, Peter Breitschopf, Werner Frammelsberger, Heiko Ranzinger, P. Reislhuber, T. Schweinböck

AFM-based scanning capacitance techniques for deep sub-micron semiconductor failure analysis

Microelectronics Reliability, vol. 44, no. 9-11, pp. 1615-1619

2004

DOI: 10.1016/j.microrel.2004.07.079

F: Elektrotechnik und MedientechnikF: Maschinenbau und MechatronikI: IQMA

Zeitschriftenartikel

T. Schweinböck, S. Schömann, D. Alvarez, M. Buzzu, Günther Benstetter, Werner Frammelsberger, Peter Breitschopf

New Trends in the application of scanning probe techniques in failure analysis

Microelectronics Reliability, vol. 44, no. 9-11, pp. 1541-1546

2004

DOI: 10.1016/j.microrel.2004.07.037

F: Elektrotechnik und MedientechnikF: Maschinenbau und MechatronikI: IQMA

Vortrag

Werner Frammelsberger, Günther Benstetter, T. Schweinböck, R. Stamp, J. Kiely, Peter Breitschopf

Atomic Force Microscopy Studies of Thin and Ultra-thin SiO2 Films

Final Report

2nd VDE World Microtechnologies Congress, München

2003

F: Elektrotechnik und MedientechnikF: Maschinenbau und MechatronikI: IQMA

Beitrag (Sammelband oder Tagungsband)

Werner Frammelsberger, Günther Benstetter, T. Schweinböck, R. Stamp, J. Kiely

Advanced Analysis of Thin and Ultrathin SiO2/Si Interfaces with Combined Atomic Force Microscopy Methods

29th International Symposium for Testing and Failure Analysis, Santa Clara, CA, USA, pp. 406-412

2003

F: Elektrotechnik und MedientechnikF: Maschinenbau und MechatronikI: IQMA

Zeitschriftenartikel

Werner Frammelsberger, Günther Benstetter, T. Schweinböck, R. Stamp, J. Kiely

Characterization of thin and ultrathin SiO2 films and SiO2/Si interfaces with combined conducting and topographic atomic force microscopy

Microelectronics Reliability, vol. 43, no. 1, pp. 1465-1470

2003

DOI: 10.1016/S0026-2714(03)00260-9

F: Elektrotechnik und MedientechnikF: Maschinenbau und MechatronikI: IQMA

Vortrag

Werner Frammelsberger, Günther Benstetter, T. Schweinböck, R. Stamp, J. Kiely

Advanced Analysis of Thin and Ultrathin SiO2/Si Interfaces with Combined Atomic Force Microscopy Methods

29th International Symposium for Testing and Failure Analysis, Santa Clara, CA, USA, pp. 406-412

2003

F: Elektrotechnik und MedientechnikF: Maschinenbau und MechatronikI: IQMA

Vortrag

Günther Benstetter, Werner Frammelsberger, T. Schweinböck, R. Stamp, J. Kiely

Conducting Atomic Force Microscopy Studies for Reliability Evaluation of Ultrathin SiO2 Films

Final Report

IEEE International Integrated Reliability Workshop, Lake Tahoe, CA, USA

2002