Suche nach „[Ranzinger] [Heiko]“ hat 8 Publikationen gefunden

Elektrotechnik und MedientechnikIQMA

Vortrag

S. Rogowsky, R. Ostendorf, G. Kaufel, W. Pletschen, J. Wagner, S. Liebich, M. Zimprich, K. Volz, W. Stolz, B. Kunert, Edgar Lodermeier, Heiko Ranzinger, Günther Benstetter

Characteristics of diode laser structures on silicon substrates based on the Ga(NAsP)/(BGa)(AsP) materials combination

Photonics West, San Francisco, CA, USA

Elektrotechnik und MedientechnikIQMA

Zeitschriftenartikel

M. Lanza, M. Porti, M. Nafría, X. Aymerich, Günther Benstetter, Edgar Lodermeier, Heiko Ranzinger, G. Jaschke, S. Teichert, L. Wilde, P. Michalowski

Conductivity and Charge Trapping After Electrical Stress in Amorphous and Polycrystalline Al2O3-Based Devices Studied With AFM-Related Techniques

IEEE Transactions on Nanotechnology, vol. 10, no. 2, pp. 344-351

Abstract anzeigen

In this paper, atomic force microscopy-based techniques have been used to study, at nanoscale, the dependence of the electrical properties of Al2O3 stacks for flash memories on the annealing temperature (T-A). The electrical characterization has been combined with other techniques (for example, transmission electron microscopy) that have allowed to investigate the dependence of the stack crystallization and the Si diffusion from the substrate to the gate oxide on T-A. The combination of both the analyses has allowed to explore if there is a relation between the percentage of diffused silicon and material crystallization with the conductivity and charge trapping of Al2O3 stacks.

Elektrotechnik und MedientechnikIQMA

Zeitschriftenartikel

M. Lanza, M. Porti, M. Nafría, X. Aymerich, Günther Benstetter, Edgar Lodermeier, Heiko Ranzinger, G. Jaschke, S. Teichert, L. Wilde, P. Michalowski

Crystallization and silicon diffusion nanoscale effects on the electrical properties of Al2O3 based devices

Microelectronic Engineering, vol. 86, no. 7-9, pp. 1921-1924

Abstract anzeigen

In this work, Atomic Force Microscopy (AFM) based techniques are used to study, at the nanoscale, the dependence of the electrical properties of Al2O3 stacks for Flash memories on the percent of diffused Silicon and material crystallization after being annealed at different temperatures.

Elektrotechnik und MedientechnikIQMAMaschinenbau und Mechatronik

Vortrag

Günther Benstetter, Werner Frammelsberger, Edgar Lodermeier, Heiko Ranzinger, D. Liu, Peter Breitschopf, W. Bergbauer, Alexander Hofer

Raster-Sonden-Mikroskopie (SPM) in der Fehler- und Zuverlässigkeitsanalytik

VDE Fehlermechanismen bei kleinen Geometrien, Grainau

Elektrotechnik und MedientechnikIQMAMaschinenbau und Mechatronik

Vortrag

Günther Benstetter, Peter Breitschopf, Werner Frammelsberger, Heiko Ranzinger, P. Reislhuber, T. Schweinböck

AFM-based scanning capacitance techniques for deep sub-micron semiconductor failure analysis

15th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Zürich, Schweiz

Elektrotechnik und MedientechnikIQMAMaschinenbau und Mechatronik

Zeitschriftenartikel

Günther Benstetter, Peter Breitschopf, Werner Frammelsberger, Heiko Ranzinger, P. Reislhuber, T. Schweinböck

AFM-based scanning capacitance techniques for deep sub-micron semiconductor failure analysis

Microelectronics Reliability, vol. 44, no. 9-11, pp. 1615-1619

DOI: 10.1016/j.microrel.2004.07.079

Elektrotechnik und MedientechnikIQMAMaschinenbau und Mechatronik

Vortrag

M. Lanza, M. Porti, M. Nafría, Günther Benstetter, Werner Frammelsberger, Heiko Ranzinger, Edgar Lodermeier, G. Jaschke

Influence of the manufacturing process on the electrical properties of thin (< 4 nm) Hafnium based high-k stacks observed with CAFM

18th European Symposium on Reliability of Electronic Devices, Failure Physics and Analysis (ESREF), Arcachon, Frankreich

Elektrotechnik und MedientechnikIQMAMaschinenbau und Mechatronik

Zeitschriftenartikel

M. Lanza, M. Porti, M. Nafría, Günther Benstetter, Werner Frammelsberger, Heiko Ranzinger, Edgar Lodermeier, G. Jaschke

Influence of the manufacturing process on the electrical properties of thin (< 4 nm) Hafnium based high-k stacks observed with CAFM

Microelectronics Reliability, vol. 47, no. 9, pp. 1424-1428

Abstract anzeigen

In this work, the dependence of the electrical characteristics of some thin (<4 nm) HfO2, HfSiO and HfO2/SiO2 stacks on their manufacturing process is studied at the nanoscale. Topography, current maps and current–voltage (I–V) characteristics have been collected by conductive atomic force microscope (CAFM), which show that their conductivity depends on some manufacturing parameters. Increasing the annealing temperature, physical thickness or Hafnium content makes the structure less conductive.