Publikationen


Suche nach „[R.] [Dietrich]“ hat 3 Publikationen gefunden
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    NachhaltigF: Angewandte Naturwissenschaften und WirtschaftsingenieurwesenS: TC Teisnach Sensorik

    Beitrag (Sammelband oder Tagungsband)

    F. Erber, Günther Ruhl, R. Dietrich, J. Mathuni, P. Nesladek

    Development and characterization of a new plasma etching process for mask manufacturing

    Proceedings of Photomask and Next Generation Lithography Mask Technology VIII (September 2001; Kanagawa, Japan), vol. Vol. 4409

    2001

    DOI: 10.1117/12.438358

    Abstract anzeigen

    CD uniformity and CD mean to target specifications nowadays can only be accomplished by mask manufacturing process using chrome dry etch. Chrome plasma etch processes tend to show a strong dependency of the chrome etch rate and thus the etch bias on the clearfield percentage of a mask resulting in varying offtarget behavior. There are various possibilities to compensate for this loading effect. In previous work the methods of using exposure dose and development time for offtarget control were investigated. In this study we examined the capability of plasma etch parameters to be used for offtarget control. The effects of oxygen concentration, pressure and overetch percentage on etch bias and CD uniformity were experiment. Two different development processes were investigated. The resulting offtarget control model was then confirmed by running additional masks at three different clearfield percentages. Measurement results showed a high confidence level for the model predicted numbers. SEM images confirmed stable behavior of chromium sidewall angles.

    NachhaltigF: Angewandte Naturwissenschaften und WirtschaftsingenieurwesenS: TC Teisnach Sensorik

    Zeitschriftenartikel

    Günther Ruhl, R. Dietrich, R. Ludwig, N. Falk, T. Morrison, B. Stoehr

    Optimizing the Chromium Dry Etch Process

    Semiconductor International, vol. 24, pp. 239-246

    2001

    Abstract anzeigen

    A dry etch process for etching chromium-on-glass masks was developed and optimized. During optimization for minimum etch bias, a new type of metrology tool was used to measure critical dimensions and characterize the sidewall profiles of both the photoresist and the final mask structures.

    NachhaltigF: Angewandte Naturwissenschaften und WirtschaftsingenieurwesenS: TC Teisnach Sensorik

    Beitrag (Sammelband oder Tagungsband)

    Günther Ruhl, R. Dietrich, R. Ludwig, N. Falk, T. Morrison, B. Stoehr

    Chrome dry etch characterization using Surface Nano Profiling

    Proceedings of the 20th Annual BACUS Symposium on Photomask Technology (September 13-15, 2000; Monterey, CA, USA), vol. Vol. 4186

    2001

    DOI: 10.1117/12.410753

    Abstract anzeigen

    In this paper we describe the development of a chrome dry etch process on a new type of mask etch tool. One crucial goal was to minimize the CD etch bias. To meet this goal, a procedure for the direct characterization of CD etch bias was developed. The common methods for measuring the CD etch bias as resist-to-chrome CD difference, such as confocal optical microscope or SEM measurement, only give correct results, if the sidewalls are identical to the calibration standard. This is normally not the case as, due to the differing step height of resist and chrome, and the fact that during process development, in particular, the sidewall shapes and angles can vary significantly. Thus, it is very important to use a CD measurement method which takes the sidewall shapes (slope, foot) into account. One novel method is the use of a Scanning Nano Profiler (SNP) which was derived from the AFM principle. In contrast to AFM the use of a special high aspect ratio tip with 90° sidewall angle, in combination with pixelwise scanning of the substrate surface, provides information about the true sidewall shape and CD.