Suche nach „[R.] [Biberger]“ hat 13 Publikationen gefunden

F: Elektrotechnik und MedientechnikI: IQMA

Vortrag

Alexander Hofer, R. Biberger, Günther Benstetter, B. Wilke, H. Göbel

Scanning probe microscopy based electrical characterization of thin dielectric and organic semiconductor films

24th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Arcachon, Frankreich

2013

F: Elektrotechnik und MedientechnikI: IQMA

Zeitschriftenartikel

Alexander Hofer, R. Biberger, Günther Benstetter, B. Wilke, H. Göbel

Scanning probe microscopy based electrical characterization of thin dielectric and organic semiconductor films

Microelectronics Reliability, vol. 53, no. 9-11, pp. 1430-1433

2013

Abstract anzeigen

Scanning probe microscopy (SPM) techniques offer various characterization methods for thin organic films. However, the majority of the electrical SPM measurements is currently performed in contact mode operation and may lead to severe damage at the surface of soft organic materials. This work shows the electrical characterization of organic insulator and semiconductor films by use of two SPM techniques operating with reduced lateral forces between SPM tip and sample. The first one is intermittent-contact scanning-capacitance-microscopy (IC-SCM) which is used for the detection of the local surface capacitance. The second one is torsional resonance tunneling-atomic-force-microscopy (TR-TUNA) which shows the local conductivity respectively relative film thickness of the sample. It is found that the tunneling current distribution across 50 nm thick organic insulating films is very homogeneous and that inhomogeneities in P3HT and Pentacene films can be pinpointed even if no topographical variations are observable.

F: Elektrotechnik und MedientechnikI: IQMA

Zeitschriftenartikel

Alexander Hofer, Günther Benstetter, R. Biberger, C. Leirer, G. Brüderl

Analysis of crystal defects on GaN based semiconductors with advanced scanning probe microscope technique

Thin Solid Films, vol. 544, no. Oktober, pp. 139-143

2013

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The correlation of surface pits with leakage currents in gallium nitride (GaN) films are studied with scanning probe microscopy (SPM) techniques. The analyses were performed at both single n-GaN films grown on free-standing GaN and completely processed GaN light-emitting diode (LED) structures on sapphire substrates both grown by metal organic chemical vapor phase epitaxy. Topographical SPM images acquired with ultra-sharp probes were superimposed with current maps obtained by conductive atomic force microscopy (CAFM). The applicability of two different modifications of CAFM techniques has been studied. For both sample types, CAFM has revealed a clear correlation between forward-bias leakage current and locations of surface pits. In case of the LED structure, additional local current–voltage characteristics show that enhanced current conduction occurs in both forward and reverse bias on surface pit positions.

F: Elektrotechnik und MedientechnikI: IQMA

Vortrag

Alexander Hofer, Günther Benstetter, R. Biberger, C. Leirer, G. Brüderl

Analysis of crystal defects on GaN-based semiconductors with advanced scanning probe microscope techniques

Invited Talk

6th International Conference on Technological Advances of Thin Films & Surface Coatings (THINFILMS2012), Singapur, Singapur

2012

F: Elektrotechnik und MedientechnikI: IQMA

Vortrag

Alexander Hofer, B. Wilke, R. Biberger, Günther Benstetter, H. Göbel

Capacitance and Conductivity Mapping of Organic Films and Devices with Non-Contact SPM Methods

International Workshop on Scanning Probe Microscopy for Energy Applications, Mainz

2011

F: Elektrotechnik und MedientechnikI: IQMA

Zeitschriftenartikel

R. Biberger, Günther Benstetter, et al.

Intermittent-Contact Capacitance Spectroscopy – A new method for determining C(V) curves with sub-micron lateral resolution

Microelectronics Reliability, vol. 50, pp. 1511-1513

2010

Abstract anzeigen

This study introduces a novel method to measure C(V) characteristics of local MOS structures based on scanning probe microscopy (SPM) techniques. The new method operates in intermittent-contact (IC) mode and combines both the advantages of contact mode C(V) spectroscopy and intermittent-contact scanning capacitance microscopy. As a consequence, on the one hand dopant concentration and dopant type can be indicated simultaneously, on the other hand tip wear is reduced significantly.

F: Elektrotechnik und MedientechnikI: IQMA

Vortrag

R. Biberger, Günther Benstetter

Displacement Current Sensor for two-dimensional dopant profiling

ITG Discussion, Grainau

2010

F: Elektrotechnik und MedientechnikI: IQMA

Vortrag

Günther Benstetter, R. Biberger, Alexander Hofer, H. Göbel

Intermittent-Contact Scanning Capacitance Analysis of Thin Dielectric Films and Semiconductor Devices

Invited Talk

5th International Conference on Technological Advances of Thin Films & Surface Coatings, Harbin, China

2010

F: Elektrotechnik und MedientechnikI: IQMA

Zeitschriftenartikel

Günther Benstetter, R. Biberger, D. Liu

A Review of Advanced Scanning Probe Microscope Analysis of Functional Films and Semiconductor Devices

Thin Solid Films, vol. 517, no. 17, pp. 5100-5105

2009

Abstract anzeigen

This paper gives an overview of established methods and new developments in the field of Scanning Probe Microscopy (SPM) of functional films and semiconductor devices. It focuses on both, SPM analyses of passive structures and devices in operation. The contribution includes techniques such as Scanning Capacitance Microscopy (SCM) and Scanning Spreading Resistance Microscopy (SSRM) for implant mapping, Conductive AFM (C-AFM) for thin dielectrics analysis and Kelvin Probe Force Microscopy (KPFM) to study the potential distribution across active electronic devices. Finally combinations of different SPM-based techniques are described and future challenges for SPM-based techniques are discussed.

F: Elektrotechnik und MedientechnikI: IQMA

Zeitschriftenartikel

R. Biberger, Günther Benstetter, H. Göbel

Displacement current sensor for contact and intermittent contact scanning capacitance microscopy

Microelectronics Reliability, vol. 49, no. 1, pp. 1192-1195

2009

Abstract anzeigen

In this study a displacement current capacitance sensor (DCCS) for scanning capacitance microscopy (SCM) is introduced. It can be used for both intermittent contact (IC) and contact-SCM operation. Based on I/V conversion and subsequent lock-in amplification a displacement current can be detected and used as a measure for dopant concentration. Therefore a periodic variation of the AFM tip substrate capacitance is required. This can be achieved either by a periodic tip oscillation (IC-SCM) or an applied AC voltage between tip and sample (contact-SCM). The advantage of the DCCS is the linearity, which makes it possible to detect absolute dopant concentrations.

F: Elektrotechnik und MedientechnikI: IQMA

Vortrag

Günther Benstetter, R. Biberger, D. Liu

A Review of Advanced Scanning Probe Microscope Analysis of Functional Films and Semiconductor Devices

Invited Talk

Thin Films, Singapur

2008

F: Elektrotechnik und Medientechnik

Vortrag

R. Biberger

Dopant profiling with Intermittent-Contact Scanning Capacitance Microscopy

ITG Discussion, Grainau

2008

F: Elektrotechnik und MedientechnikI: IQMA

Zeitschriftenartikel

R. Biberger, Günther Benstetter, T. Schweinböck, Peter Breitschopf, H. Göbel

Intermittent-contact scanning capacitance microscopy versus contact mode SCM applied to 2D dopant profiling

Microelectronics Reliability, vol. 48 (8-9), pp. 1339-1349

2008

Abstract anzeigen

This study compares two different methods of scanning capacitance microscopy (SCM). The first and approved one operates in contact mode and the second novel one in intermittent-contact (IC) mode. Measurements were performed on several samples and the results are compared. New technical expertises on the novel intermittent-contact method are shown and in conclusion assets and drawbacks of this SCM method are emphasized.