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Suche nach „[P.] [Baumann]“ hat 6 Publikationen gefunden
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    NachhaltigAngewandte Naturwissenschaften und WirtschaftsingenieurwesenTAZ Spiegelau

    Zeitschriftenartikel

    S. Rushworth, S. Haukkac, W. Besling, T. Blomberg, B. Riou, Günther Ruhl, A. Roeste, A. Zauner, M. Lukosius, W. Lehnert, E. Langereis, P. Baumann, C. Wenger, F. Roozeboom, S. Lhostif, A. Halimaou, C. Baristiran Kaynak, W.M.M. Kessels

    Dielectric Material Options for Integrated Capacitors

    ECS Journal of Solid State Science and Technology, vol. 3, no. 8

    2014

    DOI: 10.1149/2.0101408jss

    Abstract anzeigen

    Future MIM capacitor generations will require significantly increased specific capacitances by utilization of high-k dielectric materials. In order to achieve high capacitance per chip area, these dielectrics have to be deposited in three-dimensional capacitor structures by ALD or AVD (atomic vapor deposition) process techniques. In this study eight dielectric materials, which can be deposited by these techniques and exhibit the potential to reach k-values of over 50 were identified, prepared and characterized as single films and stacked film systems. To primarily focus on a material comparison, preliminary processes were used for film deposition on planar test devices. Measuring leakage current density versus the dielectric constant k shows that at low voltages (≤1 V) dielectrics with k-values up to 100 satisfy the typical leakage current density specification of <10−7 A/cm2 for MIM capacitors. At higher voltages (3 V) this specification is only fulfilled for dielectrics with k-values below 45. As a consequence, the maximum achievable capacitance gain by introducing high-k dielectrics depends on the operating voltage of the application, such as DRAM capacitors or RF and blocking capacitors. To meet the reliability requirements for RF and blocking capacitors, high-k dielectric film thicknesses of up to 50 nm are necessary.

    NachhaltigAngewandte Naturwissenschaften und WirtschaftsingenieurwesenTAZ Spiegelau

    Zeitschriftenartikel

    A. Abrutis, T. Blomberg, Günther Ruhl, P. Baumann, M. Lukosius, C. Wenger, G. Lupina

    Electrical and Morphological Properties of ALD and AVD Grown Perovskite-Type Dielectrics and Their Stacks for Metal-Insulator-Metal Applications

    ECS Journal of Solid State Science and Technology, vol. 1, no. 1

    2012

    NachhaltigAngewandte Naturwissenschaften und WirtschaftsingenieurwesenTAZ Spiegelau

    Zeitschriftenartikel

    A. Abrutis, T. Blomberg, Günther Ruhl, M. Lukosius, P. Baumann, C. Wenger

    ALD and AVD Grown Perovskite-type Dielectrics for Metal-Insulator-Metal Application

    (Invited)

    ECS Transactions, vol. 41, no. 2, pp. 53-61

    2011

    DOI: 10.1149/1.3633654

    Abstract anzeigen

    Atomic Vapor Deposition (AVD) and Atomic Layer Deposition (ALD) techniques were successfully applied for the depositions of perovskite type dielectrics, namely, Sr-Ta-O, Ti-Ta-O, Sr-Ti-O, Ba-Hf-O, Nb-Ta-O and Ce-Al-O. Thin films were investigated as alternative dielectrics for Metal-Insulator-Insulator (MIM) capacitors. Structural and electrical properties are investigated after depositing the metal oxides on 200 mm TiN/Si (100) substrates within the temperature range of 225-400 ºC. Electrical properties, investigated after sputtering Au top electrodes, revealed that the main characteristics are different for each dielectric. The highest dielectric constants were achieved for crystalline SrTiO3 (k=95), crystalline CeAlO3 (k = 60) and amorphous Ti-Ta-O (k = 50) films. However, Sr-Ta-O based MIM capacitors showed the lowest leakage current densities as well as the smallest capacitancevoltage linearity coefficients.

    NachhaltigAngewandte Naturwissenschaften und WirtschaftsingenieurwesenTAZ Spiegelau

    Zeitschriftenartikel

    T. Blomberg, Günther Ruhl, P. Baumann, C. Wenger, C. Baristiran Kaynak

    ALD grown NbTaOx based MIM capacitors

    Microelectronic Engineering, vol. 88, no. 8, pp. 2447-2451

    2011

    NachhaltigAngewandte Naturwissenschaften und WirtschaftsingenieurwesenTAZ Spiegelau

    Zeitschriftenartikel

    S. Rushworth, Günther Ruhl, M. Lukosius, P. Baumann, C. Wenger, C. Baristiran Kaynak

    Atomic Vapor Depositions of Ti–Ta–O thin films for Metal–Insulator–Metal applications

    Thin Solid Films, vol. 519, no. 11, pp. 3831-3834

    2011

    DOI: 10.1016/j.tsf.2011.01.239

    Abstract anzeigen

    Atomic Vapor Deposition technique was applied for the depositions of Ti–Ta–O oxide films for Metal–Insulator–Metal capacitors used in back-end of line for Radio Frequency applications. Composition, crystallinity, thermal stability and electrical properties were studied. Ti–Ta–O films, with the ratio of Ta/Ti ~ 1.5, deposited at 400 °C on TiN electrodes, were amorphous and possessed a dielectric constant of 50 with low voltage linearity coefficients and leakage currents densities as low as 10− 7 A/cm2 at 1 V. The films, deposited on Si wafers, were amorphous up to the annealing temperature of 700 °C and crystallized in orthorhombic Ta2O5 phase at higher temperatures.

    NachhaltigAngewandte Naturwissenschaften und WirtschaftsingenieurwesenTAZ Spiegelau

    Zeitschriftenartikel

    L. Pfitzner, S. Petersen, G. Roeder, V. Yanev, C. Manke, Günther Ruhl, M. Schellenberger, P. Baumann, A. Gschwandtner, H. Ryssel, P. Petrik

    Characterization of Ru and RuO2 thin films prepared by pulsed metal organic chemical vapor deposition

    Current Topics in Solid State Physics, vol. 5, no. 5, pp. 1231-1234

    2008

    DOI: 10.1002/pssc.200777865

    Abstract anzeigen

    Ultra‐thin ruthenium (Ru) layers were fabricated by pulsed metal organic chemical vapor deposition in an Aixtron Tricent reactor using a metal‐organic Ru precursor. Layer deposition was performed on different metal barrier combinations and on Al2O3 dielectric layers used in the fabrication of advanced Metal‐Insulator‐Metal (MIM) capacitor structures and on thermal SiO2 as reference structure. Ru layers with a thickness of 10 nm were characterized by Spectroscopic Ellipsometry (SE) and additional reference methods such as Transmission Electron Microscopy (TEM), Atomic Force Microscopy (AFM), and X‐Ray Reflectometry (XRR). As deposited and in situ annealed Ru layers were characterized by SE applying Drude‐Lorentz‐ and Effective Medium Approximation (EMA) models. It was shown that the deposited layers consist of a Ru‐RuO2 bilayer structure. By in situ annealing, the RuO2 layer thickness is reduced and highly pure Ru films are obtained. On the metal barriers the formation of a metal oxide interface, which is related to the deposition process, was determined.