F: Elektrotechnik und MedientechnikI: IQMAZeitschriftenartikel
V. Iglesias, M. Lanza, K. Zhang, A. Bayerl, M. Porti, M. Nafría, X. Aymerich, Günther Benstetter, Z. Shen, G. Bersuker
Degradation of polycrystalline HfO2 based gate dielectrics under nanoscale electrical stress
Applied Physics Letters, vol. 99
2011
Abstract anzeigen
The evolution of the electrical properties of HfO2/SiO2/Si dielectric stacks under electrical stress has been investigated using atomic force microscope-based techniques. The current through the grain boundaries (GBs), which is found to be higher than thorough the grains, is correlated to a higher density of positively charged defects at the GBs. Electrical stress produces different degradation kinetics in the grains and GBs, with a much shorter time to breakdown in the latter, indicating that GBs facilitate dielectric breakdown in high-k gate stacks.
F: Elektrotechnik und MedientechnikI: IQMAZeitschriftenartikel
A. Bayerl, M. Lanza, M. Porti, M. Nafría, X. Aymerich, F. Campabadal, Günther Benstetter
Nanoscale and Device Level Gate Conduction Variability of High-k Dielectrics-Based Metal-Oxide-Semiconductor Structures
IEEE Transactions on Device and Materials Reliability, vol. 11, no. September, pp. 495-501
2011
DOI: 10.1109/TDMR.2011.2161087
Abstract anzeigen
The polycrystalline microstructure of the high-k dielectric of gate stacks in metal-oxide-semiconductor (MOS) devices can be a potential source of variability. In this paper, a conductive atomic force microscope (CAFM) and a Kelvin probe force microscope (KPFM) have been used to investigate how the thickness and the crystallization (after a thermal annealing) of the high-k layer affect the nanoscale morphological and electrical properties of the gate stack. The impact of such nanoscale properties on the reliability and variability of the global gate electrical characteristics of fully processed MOS devices has also been investigated.
F: Elektrotechnik und MedientechnikI: IQMAZeitschriftenartikel
A. Bayerl, M. Lanza, M. Porti, F. Campabadal, M. Nafría, X. Aymerich, Günther Benstetter
Reliability and gate conduction variability of HfO2-based MOS devices: A combined nanoscale and device level study
Microelectronic Engineering, vol. 88, pp. 1334-1337
2011
Abstract anzeigen
The electrical properties and reliability of MOS devices based on high-k dielectrics can be affected when the gate stack is subjected to an annealing process, which can lead to the polycrystallization of the high-k layer. In this work, a Conductive Atomic Force Microscope (C-AFM) has been used to study the nanoscale electrical conduction and reliability of amorphous and polycrystalline HfO2 based gate stacks. The link between the nanoscale properties and the reliability and gate conduction variability of fully processed MOS devices has also been investigated.
F: Elektrotechnik und MedientechnikI: IQMAZeitschriftenartikel
M. Lanza, M. Porti, M. Nafría, X. Aymerich, Günther Benstetter, Edgar Lodermeier, Heiko Ranzinger, G. Jaschke, S. Teichert, L. Wilde, P. Michalowski
Conductivity and Charge Trapping After Electrical Stress in Amorphous and Polycrystalline Al2O3-Based Devices Studied With AFM-Related Techniques
IEEE Transactions on Nanotechnology, vol. 10, no. 2, pp. 344-351
2011
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In this paper, atomic force microscopy-based techniques have been used to study, at nanoscale, the dependence of the electrical properties of Al2O3 stacks for flash memories on the annealing temperature (T-A). The electrical characterization has been combined with other techniques (for example, transmission electron microscopy) that have allowed to investigate the dependence of the stack crystallization and the Si diffusion from the substrate to the gate oxide on T-A. The combination of both the analyses has allowed to explore if there is a relation between the percentage of diffused silicon and material crystallization with the conductivity and charge trapping of Al2O3 stacks.
F: Elektrotechnik und MedientechnikI: IQMAZeitschriftenartikel
M. Lanza, M. Porti, M. Nafría, X. Aymerich, Günther Benstetter, Edgar Lodermeier, Heiko Ranzinger, G. Jaschke, S. Teichert, L. Wilde, P. Michalowski
Crystallization and silicon diffusion nanoscale effects on the electrical properties of Al2O3 based devices
Microelectronic Engineering, vol. 86, no. 7-9, pp. 1921-1924
2009
Abstract anzeigen
In this work, Atomic Force Microscopy (AFM) based techniques are used to study, at the nanoscale, the dependence of the electrical properties of Al2O3 stacks for Flash memories on the percent of diffused Silicon and material crystallization after being annealed at different temperatures.
F: Elektrotechnik und MedientechnikF: Maschinenbau und MechatronikI: IQMAVortrag
M. Lanza, M. Porti, M. Nafría, Günther Benstetter, Werner Frammelsberger, Heiko Ranzinger, Edgar Lodermeier, G. Jaschke
Influence of the manufacturing process on the electrical properties of thin (< 4 nm) Hafnium based high-k stacks observed with CAFM
18th European Symposium on Reliability of Electronic Devices, Failure Physics and Analysis (ESREF), Arcachon, Frankreich
2007
F: Elektrotechnik und MedientechnikF: Maschinenbau und MechatronikI: IQMAZeitschriftenartikel
M. Lanza, M. Porti, M. Nafría, Günther Benstetter, Werner Frammelsberger, Heiko Ranzinger, Edgar Lodermeier, G. Jaschke
Influence of the manufacturing process on the electrical properties of thin (< 4 nm) Hafnium based high-k stacks observed with CAFM
Microelectronics Reliability, vol. 47, no. 9, pp. 1424-1428
2007
Abstract anzeigen
In this work, the dependence of the electrical characteristics of some thin (<4 nm) HfO2, HfSiO and HfO2/SiO2 stacks on their manufacturing process is studied at the nanoscale. Topography, current maps and current–voltage (I–V) characteristics have been collected by conductive atomic force microscope (CAFM), which show that their conductivity depends on some manufacturing parameters. Increasing the annealing temperature, physical thickness or Hafnium content makes the structure less conductive.
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