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Suche nach „[M.] [Pöbl]“ hat 3 Publikationen gefunden
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    Elektrotechnik und Medientechnik

    Zeitschriftenartikel

    J. Freyer, W. Harth, Werner Bogner, M. Pöbl, M. Claassen

    GaAs transit-time diodes for D-band frequencies

    Electrical Engineering, vol. 78, pp. 257-259

    1995

    Abstract anzeigen

    Tunneling assisted GaAs avalanche transit-time diodes with oscillation frequencies between 140 and 170 GHz are presented. The device design results in a relatively low dc-voltage of 8 Volts. A non-alloyed Schottky contact instead of an ohmic contact on highly doped GaAs reduces losses at rf-frequencies. Cw-output power of 10 mW at 142 GHz and 1.3 mW at 170 GHz are attained in fundamental mode with devices on diamond heat-sinks. The diodes show an excellent noise behaviour resulting in a noise measure of only 26.5 dB at 170 GHz.

    Elektrotechnik und Medientechnik

    Vortrag

    J. Freyer, T. Bauer, M. Tschernitz, M. Claassen, M. Pöbl, Werner Bogner

    GaAs transit‑time device structures for power generation from 100 up to 200 GHz

    International Seminar on Terahertz Electronics, Darmstadt

    1994

    Elektrotechnik und Medientechnik

    Zeitschriftenartikel

    M. Pöbl, Werner Bogner, L. Gaul

    CW GaAs MITATT source on copper heatsink up to 160 GHz

    Electronics Letters, vol. 30, no. 16, pp. 1316-1317

    1994

    Abstract anzeigen

    The performance of a GaAs pn-junction transit time device with mixed tunnel-avalanche breakdown is described. At 164 GHz a CW output power of 1 mW has been achieved in the fundamental mode with devices on copper heatsink. This is to date the highest frequency achieved with CW GaAs diodes. The corresponding noise measure is 28 dB at 160 GHz