Suche nach „[M.] [Nafría]“ hat 17 Publikationen gefunden

NachhaltigF: Elektrotechnik und MedientechnikI: IQMA

Vortrag

Tobias Berthold, Günther Benstetter, Werner Frammelsberger, Manuel Bogner, R. Rodríguez, M. Nafría

Protective nanometer films for reliable Cu-Cu connections

Invited Talk

IEEE International Reliability Physics Symposium (IRPS), San Francisco, CA, USA

2018

NachhaltigF: Elektrotechnik und MedientechnikF: Maschinenbau und MechatronikI: IQMA

Beitrag (Sammelband oder Tagungsband)

Tobias Berthold, Günther Benstetter, Werner Frammelsberger, Manuel Bogner, R. Rodríguez, M. Nafría

Protective nanometer films for reliable Cu-Cu connections

Best Paper Award

Proceedings of the 28th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF) [25-28 September, 2017; Bordeaux, Frankreich]

2017

NachhaltigF: Elektrotechnik und MedientechnikF: Maschinenbau und MechatronikI: IQMA

Zeitschriftenartikel

Tobias Berthold, Günther Benstetter, Werner Frammelsberger, R. Rodríguez, M. Nafría

Numerical Study of Hydrodynamic Forces for AFM Operations in Liquid Scanning (Article ID 6286595, 12 pages)

Scanning, no. Article ID 6286595, pp. 1-12

2017

DOI: 10.1155/2017/6286595

Abstract anzeigen

For advanced atomic force microscopy (AFM) investigation of chemical surface modifications or very soft organic sample surfaces, the AFM probe tip needs to be operated in a liquid environment because any attractive or repulsive forces influenced by the measurement environment could obscure molecular forces. Due to fluid properties, the mechanical behavior of the AFM cantilever is influenced by the hydrodynamic drag force due to viscous friction with the liquid. This study provides a numerical model based on computational fluid dynamics (CFD) and investigates the hydrodynamic drag forces for different cantilever geometries and varying fluid conditions for Peakforce Tapping (PFT) in liquids. The developed model was verified by comparing the predicted values with published results of other researchers and the findings confirmed that drag force dependence on tip speed is essentially linear in nature. We observed that triangular cantilever geometry provides significant lower drag forces than rectangular geometry and that short cantilever offers reduced flow resistance. The influence of different liquids such as ultrapure water or an ethanol-water mixture as well as a temperature induced variation of the drag force could be demonstrated. The acting forces are lowest in ultrapure water, whereas with increasing ethanol concentrations the drag forces increase.

NachhaltigF: Elektrotechnik und MedientechnikF: Maschinenbau und MechatronikI: IQMA

Zeitschriftenartikel

Tobias Berthold, Günther Benstetter, Werner Frammelsberger, Manuel Bogner, R. Rodríguez, M. Nafría

Protective nanometer films for reliable Cu-Cu connections

Microelectronics Reliability, vol. 76-77, no. September, pp. 383-389

2017

DOI: 10.1016/j.microrel.2017.07.001

NachhaltigF: Elektrotechnik und MedientechnikI: IQMA

Zeitschriftenartikel

Tobias Berthold, Günther Benstetter, Werner Frammelsberger, R. Rodríguez, M. Nafría

Nanoscale characterization of CH3-terminated Self-Assembled Monolayer on copper by advanced scanning probe microscopy techniques

Applied Surface Science, vol. 356, pp. 921-926

2015

DOI: 10.1016/j.apsusc.2015.08.182

Abstract anzeigen

In this study, we used Self-Assembled Monolayer (SAM) with CH3 end-group molecules to protect copper surfaces from oxidation and investigated at nanometer scale the integrity and temperature stability of the protective film. The films were characterized by dynamic Chemical Force Microscopy (dCFM), Torsional Resonance Tunneling Atomic Force Microscopy (TR-TUNA) and Attenuated Total Reflection Fourier Transform Infrared Spectroscopy (ATR-FTIR). We observed that temperature stress degraded local properties of our SAM films significantly, when compared to unstressed films. After temperature stress at 100 °C, tunneling current increased and hydrophobicity decreased substantially. In combination with the ATR-FTIR results we assigned local high current spots and local hydrophobic variations to cuprous oxide (Cu2O). After temperature stress at 150 °C, the measurements indicate a decomposition of the SAM film and a further oxidation of the copper surface. In addition, the results show that dynamic dCFM and TR-TUNA are appropriate tools to characterize SAM films structurally, chemically and electrically. Most important, in contrast to conventional contact mode Atomic Force Microscopy techniques, we did not observe any damage to the SAM film by dCFM and TR-TUNA measurements.

NachhaltigF: Elektrotechnik und MedientechnikI: IQMA

Zeitschriftenartikel

Tobias Berthold, Günther Benstetter, Werner Frammelsberger, R. Rodríguez, M. Nafría

Nanoscale characterization of copper oxide films by Kelvin Probe Force Microscopy

Thin Solid Films, vol. 584, no. June 2015, pp. 310-315

2015

DOI: 10.1016/j.tsf.2015.01.071

Abstract anzeigen

In this work Peakforce Kelvin Probe Force Microscopy (PF-KPFM) at ambient environment is used to characterize both oxidation states of copper (Cu) surfaces, cupric oxide CuO and cuprous oxide Cu2O, with high lateral resolution. Characteristic values of the contact potential difference were obtained for the copper oxide states. By this means, PF-KPFM measurements enabled to distinguish between the different types of Cu oxide with nanometer resolution and to correlate the oxidation states to local topography features. It was even possible to identify single oxide grains on top of the Cu surface. As a result, PF-KPFM is able to address the needs for nanoscale characterization methods in semiconductor manufacturing or other related technologies where the local oxidation behavior of copper is a critical issue.

F: Elektrotechnik und MedientechnikF: Maschinenbau und MechatronikI: IQMA

Vortrag

Tobias Berthold, Günther Benstetter, Werner Frammelsberger, R. Rodríguez, M. Nafría

Characterization of Self-Assembled Monolayers on Copper by Scanning Probe Microscopy

16th International Conference on Thin Films (ICTF16), Dubrovnik, Kroatien

2014

F: Elektrotechnik und MedientechnikF: Maschinenbau und MechatronikI: IQMA

Vortrag

Tobias Berthold, Günther Benstetter, Werner Frammelsberger, R. Rodríguez, M. Nafría

Nanoscale copper oxide characterization with Kelvin Probe Force Microscopy

Posterpräsentation

The 7th International Conference on Technological Advances of Thin Films & Surface Coatings (THINFILMS2014), Chongquing, China

2014

F: Elektrotechnik und MedientechnikF: Maschinenbau und MechatronikI: IQMA

Vortrag

Tobias Berthold, Günther Benstetter, Werner Frammelsberger, R. Rodríguez, M. Nafría, Raimund Förg

Analysis of copper oxide films by combined scanning microscopy

6th International Conference on Technological Advances of Thin Films & Surface Coatings (THINFILMS2012), Singapur, Singapur

2012

F: Elektrotechnik und MedientechnikI: IQMA

Zeitschriftenartikel

V. Iglesias, M. Lanza, K. Zhang, A. Bayerl, M. Porti, M. Nafría, X. Aymerich, Günther Benstetter, Z. Shen, G. Bersuker

Degradation of polycrystalline HfO2 based gate dielectrics under nanoscale electrical stress

Applied Physics Letters, vol. 99

2011

Abstract anzeigen

The evolution of the electrical properties of HfO2/SiO2/Si dielectric stacks under electrical stress has been investigated using atomic force microscope-based techniques. The current through the grain boundaries (GBs), which is found to be higher than thorough the grains, is correlated to a higher density of positively charged defects at the GBs. Electrical stress produces different degradation kinetics in the grains and GBs, with a much shorter time to breakdown in the latter, indicating that GBs facilitate dielectric breakdown in high-k gate stacks.

F: Elektrotechnik und MedientechnikI: IQMA

Zeitschriftenartikel

A. Bayerl, M. Lanza, M. Porti, M. Nafría, X. Aymerich, F. Campabadal, Günther Benstetter

Nanoscale and Device Level Gate Conduction Variability of High-k Dielectrics-Based Metal-Oxide-Semiconductor Structures

IEEE Transactions on Device and Materials Reliability, vol. 11, no. September, pp. 495-501

2011

DOI: 10.1109/TDMR.2011.2161087

Abstract anzeigen

The polycrystalline microstructure of the high-k dielectric of gate stacks in metal-oxide-semiconductor (MOS) devices can be a potential source of variability. In this paper, a conductive atomic force microscope (CAFM) and a Kelvin probe force microscope (KPFM) have been used to investigate how the thickness and the crystallization (after a thermal annealing) of the high-k layer affect the nanoscale morphological and electrical properties of the gate stack. The impact of such nanoscale properties on the reliability and variability of the global gate electrical characteristics of fully processed MOS devices has also been investigated.

F: Elektrotechnik und MedientechnikI: IQMA

Zeitschriftenartikel

A. Bayerl, M. Lanza, M. Porti, F. Campabadal, M. Nafría, X. Aymerich, Günther Benstetter

Reliability and gate conduction variability of HfO2-based MOS devices: A combined nanoscale and device level study

Microelectronic Engineering, vol. 88, pp. 1334-1337

2011

Abstract anzeigen

The electrical properties and reliability of MOS devices based on high-k dielectrics can be affected when the gate stack is subjected to an annealing process, which can lead to the polycrystallization of the high-k layer. In this work, a Conductive Atomic Force Microscope (C-AFM) has been used to study the nanoscale electrical conduction and reliability of amorphous and polycrystalline HfO2 based gate stacks. The link between the nanoscale properties and the reliability and gate conduction variability of fully processed MOS devices has also been investigated.

F: Elektrotechnik und MedientechnikI: IQMA

Zeitschriftenartikel

M. Lanza, M. Porti, M. Nafría, X. Aymerich, Günther Benstetter, Edgar Lodermeier, Heiko Ranzinger, G. Jaschke, S. Teichert, L. Wilde, P. Michalowski

Conductivity and Charge Trapping After Electrical Stress in Amorphous and Polycrystalline Al2O3-Based Devices Studied With AFM-Related Techniques

IEEE Transactions on Nanotechnology, vol. 10, no. 2, pp. 344-351

2011

Abstract anzeigen

In this paper, atomic force microscopy-based techniques have been used to study, at nanoscale, the dependence of the electrical properties of Al2O3 stacks for flash memories on the annealing temperature (T-A). The electrical characterization has been combined with other techniques (for example, transmission electron microscopy) that have allowed to investigate the dependence of the stack crystallization and the Si diffusion from the substrate to the gate oxide on T-A. The combination of both the analyses has allowed to explore if there is a relation between the percentage of diffused silicon and material crystallization with the conductivity and charge trapping of Al2O3 stacks.

F: Elektrotechnik und MedientechnikI: IQMA

Zeitschriftenartikel

M. Lanza, M. Porti, M. Nafría, X. Aymerich, Günther Benstetter, Edgar Lodermeier, Heiko Ranzinger, G. Jaschke, S. Teichert, L. Wilde, P. Michalowski

Crystallization and silicon diffusion nanoscale effects on the electrical properties of Al2O3 based devices

Microelectronic Engineering, vol. 86, no. 7-9, pp. 1921-1924

2009

Abstract anzeigen

In this work, Atomic Force Microscopy (AFM) based techniques are used to study, at the nanoscale, the dependence of the electrical properties of Al2O3 stacks for Flash memories on the percent of diffused Silicon and material crystallization after being annealed at different temperatures.

F: Elektrotechnik und MedientechnikI: IQMA

Vortrag

M. Lanza, M. Porti, M. Nafría, X. Aymerich, Günther Benstetter, et al.

Crystallization and Silicon Diffusion Nanoscale Effects on the Electrical Properties of Al2O3 Based Devices

Conference of Insulating Films on semiconductors (INFOS 2009), Cambridge, Großbritannien

2009

F: Elektrotechnik und MedientechnikF: Maschinenbau und MechatronikI: IQMA

Vortrag

M. Lanza, M. Porti, M. Nafría, Günther Benstetter, Werner Frammelsberger, Heiko Ranzinger, Edgar Lodermeier, G. Jaschke

Influence of the manufacturing process on the electrical properties of thin (< 4 nm) Hafnium based high-k stacks observed with CAFM

18th European Symposium on Reliability of Electronic Devices, Failure Physics and Analysis (ESREF), Arcachon, Frankreich

2007

F: Elektrotechnik und MedientechnikF: Maschinenbau und MechatronikI: IQMA

Zeitschriftenartikel

M. Lanza, M. Porti, M. Nafría, Günther Benstetter, Werner Frammelsberger, Heiko Ranzinger, Edgar Lodermeier, G. Jaschke

Influence of the manufacturing process on the electrical properties of thin (< 4 nm) Hafnium based high-k stacks observed with CAFM

Microelectronics Reliability, vol. 47, no. 9, pp. 1424-1428

2007

Abstract anzeigen

In this work, the dependence of the electrical characteristics of some thin (<4 nm) HfO2, HfSiO and HfO2/SiO2 stacks on their manufacturing process is studied at the nanoscale. Topography, current maps and current–voltage (I–V) characteristics have been collected by conductive atomic force microscope (CAFM), which show that their conductivity depends on some manufacturing parameters. Increasing the annealing temperature, physical thickness or Hafnium content makes the structure less conductive.