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Suche nach „[M.] [Claassen]“ hat 3 Publikationen gefunden
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    Elektrotechnik und Medientechnik

    Zeitschriftenartikel

    J. Freyer, W. Harth, Werner Bogner, M. Pöbl, M. Claassen

    GaAs transit-time diodes for D-band frequencies

    Electrical Engineering, vol. 78, pp. 257-259

    1995

    Abstract anzeigen

    Tunneling assisted GaAs avalanche transit-time diodes with oscillation frequencies between 140 and 170 GHz are presented. The device design results in a relatively low dc-voltage of 8 Volts. A non-alloyed Schottky contact instead of an ohmic contact on highly doped GaAs reduces losses at rf-frequencies. Cw-output power of 10 mW at 142 GHz and 1.3 mW at 170 GHz are attained in fundamental mode with devices on diamond heat-sinks. The diodes show an excellent noise behaviour resulting in a noise measure of only 26.5 dB at 170 GHz.

    Elektrotechnik und Medientechnik

    Vortrag

    J. Freyer, T. Bauer, M. Tschernitz, M. Claassen, M. Pöbl, Werner Bogner

    GaAs transit‑time device structures for power generation from 100 up to 200 GHz

    International Seminar on Terahertz Electronics, Darmstadt

    1994

    Elektrotechnik und Medientechnik

    Zeitschriftenartikel

    W. Harth, Werner Bogner, L. Gaul, M. Claassen

    A comparative study on the noise measure of millimetre‑wave GaAs IMPATT diodes

    Solid-State Electronics, vol. 37, no. 3, pp. 427-431

    1994

    Abstract anzeigen

    It is theoretically and experimentally demonstrated that the small-signal noise measure of Gaas single-drift Impatt-diodes can efficiently be reduced by increasing the total width of the diode space-charge region due to shot-noise reduction and space-charge smoothing. For a total space-charge region width of 770 nm, a minimum noise-measure of 22 dB at 60 GHz is obtained. This value reaches almost the theoretical optimum noise measure of pin-avalanche diodes.