Suche nach „[L.] [Wilde]“ hat 2 Publikationen gefunden

Elektrotechnik und Medientechnik

Zeitschriftenartikel

M. Nafría, G. Jaschke, Edgar Lodermeier, X. Aymerich, Heiko Ranzinger, P. Michalowski, Günther Benstetter, M. Porti, L. Wilde, M. Lanza, S. Teichert

Conductivity and Charge Trapping After Electrical Stress in Amorphous and Polycrystalline Al2O3-Based Devices Studied With AFM-Related Techniques

IEEE Transactions on Nanotechnology, vol. 10, no. 2, pp. 344-351

2011

Abstract anzeigen

In this paper, atomic force microscopy-based techniques have been used to study, at nanoscale, the dependence of the electrical properties of Al2O3 stacks for flash memories on the annealing temperature (T-A). The electrical characterization has been combined with other techniques (for example, transmission electron microscopy) that have allowed to investigate the dependence of the stack crystallization and the Si diffusion from the substrate to the gate oxide on T-A. The combination of both the analyses has allowed to explore if there is a relation between the percentage of diffused silicon and material crystallization with the conductivity and charge trapping of Al2O3 stacks.

Elektrotechnik und Medientechnik

Zeitschriftenartikel

M. Nafría, G. Jaschke, Edgar Lodermeier, X. Aymerich, Heiko Ranzinger, P. Michalowski, Günther Benstetter, M. Porti, L. Wilde, M. Lanza, S. Teichert

Crystallization and silicon diffusion nanoscale effects on the electrical properties of Al2O3 based devices

Microelectronic Engineering, vol. 86, no. 7-9, pp. 1921-1924

2009

Abstract anzeigen

In this work, Atomic Force Microscopy (AFM) based techniques are used to study, at the nanoscale, the dependence of the electrical properties of Al2O3 stacks for Flash memories on the percent of diffused Silicon and material crystallization after being annealed at different temperatures.