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Suche nach „[J.-M.] [Batke]“ hat 4 Publikationen gefunden
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    NachhaltigAngewandte Naturwissenschaften und WirtschaftsingenieurwesenTAZ Spiegelau

    Zeitschriftenartikel

    J.-M. Batke, S. Wittman, Günther Ruhl, I. Costina, M. Lemme, T. Preis, M. König, A. Gahoi

    Accurate Graphene-Metal Junction Characterization

    IEEE Journal of the Electron Devices Society (J-EDS), vol. 7, pp. 219-226

    2019

    DOI: 10.1109/JEDS.2019.2891516

    Abstract anzeigen

    A reliable method is proposed for measuring specific contact resistivity (p C ) for graphenemetal contacts, which is based on a contact end resistance measurement. We investigate the proposed method with simulations and confirm that the sheet resistance under the metal contact (R SK ) plays an important role, as it influences the potential barrier at the graphene-metal junction. Two different complementary metal-oxide-semiconductor-compatible aluminum-based contacts are investigated to demonstrate the importance of the sheet resistance under the metal contact: the difference in R SK arises from the formation of insulating aluminum oxide (Al 2 O 3 ) and aluminum carbide (Al 4 C 3 ) interfacial layers, which depends on the graphene pretreatment and process conditions. Auger electron spectroscopy and X-ray photoelectron spectroscopy support electrical data. The method allows direct measurements of contact parameters with one contact pair and enables small test structures. It is further more reliable than the conventional transfer length method when the sheet resistance of the material under the contact is large. The proposed method is thus ideal for geometrically small contacts where it minimizes measurement errors and it can be applied in particular to study emerging devices and materials.

    NachhaltigAngewandte Naturwissenschaften und WirtschaftsingenieurwesenTAZ Spiegelau

    Zeitschriftenartikel

    J.-M. Batke, Günther Ruhl, M. Lemme, M. König

    Self-organized growth of graphene nanomesh with increased gas sensitivity

    Nanoscale, vol. 8, no. 34, pp. 15490-15496

    2016

    NachhaltigAngewandte Naturwissenschaften und WirtschaftsingenieurwesenTAZ Spiegelau

    Beitrag (Sammelband oder Tagungsband)

    J.-M. Batke, Günther Ruhl, M. Krenzer

    Development of a TiN-CVD process with very high step coverage

    Proceedings of the IEEE/SEMI Advanced Semiconductor Manufacturing Conference 2009 (ASMC '09 ; 10-12 May 2009, Berlin, Germany)

    2009

    ISBN: 978-1424436156

    DOI: 10.1109/ASMC.2009.5155948

    Abstract anzeigen

    Current high-aspect ratio devices require deposition processes for conducting barrier and electrode films in vias and trenches with increasingly high aspect ratios. In this work we studied the extension of a CVD-TiN process based on the thermal deposition from TDEAT and NH3 in combination with subsequent plasma treatment. We investigated the process parameter space (including deposition temperature, pressure, NH3/TDEAT ratio and total gas flow) applying a DoE with respect to step coverage, deposition rate and electrical resistivity. One challenge is the quantitative determination of step coverage, which we overcame by using mapping Auger Electron Spectroscopy.

    NachhaltigAngewandte Naturwissenschaften und WirtschaftsingenieurwesenTAZ Spiegelau

    Vortrag

    J.-M. Batke, Günther Ruhl, M. Krenzer

    Investigation of CVD-TiN layers for high aspect ratios

    Eingeladener Vortrag

    GMM Fachgruppentagung PVD/CVD, Erlangen