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Suche nach „[J.] [Kiely]“ hat 10 Publikationen gefunden
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    Elektrotechnik und MedientechnikMaschinenbau und Mechatronik

    Zeitschriftenartikel

    R. Stamp, J. Kiely, Günther Benstetter, Werner Frammelsberger

    C-AFM-based thickness determination of thin and ultra-thin SiO2 films by use of different conductive-coated probe tips

    Applied Surface Science, vol. 253, no. 7, pp. 3615-3626

    2007

    Abstract anzeigen

    The influence of the probe tip type on the electrical oxide thickness result was researched for four differently coated conductive tip types using SiO2 (oxide) films with optical thickness of 1.7–8.3 nm. For this purpose, conductive atomic force microscopy (C-AFM) was used to measure more than 7200 current–voltage (IV) curves. The electrical oxide thickness was determined on a statistical basis from the IV-curves using a recently published tunnelling model for C-AFM application. The model includes parameters associated with the probe tip types used. The evolution of the tip parameters is described in detail. For the theoretical tip parameters, measured and calculated IV-curves showed excellent agreement and the electrical oxide thickness versus the optical oxide thickness showed congruent behaviour, independent of the tip type. However, differences in the electrical oxide thickness were observed for the different tip types. The theoretical parameters were modified experimentally in order to reduce these differences. Theoretical and experimental tip parameters were compared and their effect on the differences in the electrical oxide thickness is discussed for the different tip types. Overall, it is shown that the proposed model provides a comprehensive framework for determining the electrical oxide thickness using C-AFM, for a wide range of oxide thicknesses and for differently coated conductive tips.

    Elektrotechnik und MedientechnikMaschinenbau und Mechatronik

    Zeitschriftenartikel

    R. Stamp, J. Kiely, Günther Benstetter, Werner Frammelsberger

    Thickness determination of thin and ultra-thin SiO2 films by C-AFM IV-spectroscopy

    Applied Surface Science, vol. 252, no. 6, pp. 2375-2388

    2006

    Abstract anzeigen

    Conductive atomic force microscopy was used to determine the electrical oxide thickness for five different silicon dioxide layers with thickness in the order of 1.6–5.04 nm. The electrical thickness results were compared with values determined by ellipsometry. A semi-analytical tunnelling current model with one single parameter set was used to superpose current/voltage curves in both the direct tunnelling and the Fowler–Nordheim tunnelling regime regions. The overall electrical oxide thickness was determined by statistical means from results of nearly 3000 IV-curves recorded for different conductive CoCr-coated tips. Good agreement between the shape of model and experimental data was achieved, widely independent of the oxide thickness. Compared with the ellipsometry value, the electrical thickness was larger by a value of 0.36 nm (22%) for the thinnest oxide and smaller by a value of 0.31 nm (6%) for the thickest oxide, while intermediate values yielded differences better than 0.15 nm (<<6%). The physical differences between the measurement techniques were shown to contribute to this observation. In addition, statistical deviations between single and multiple measurements using a single tip and using a number of different tips were analysed. The causes, for example, natural oxide thickness variations, tip wear, air humidity induced effects and contaminations, are evaluated and discussed. The method proposed was able to determine the electrical oxide thickness with a standard deviation in the order of ±±6–9%. The results suggest that for optimal results it is necessary to perform several repetitions of IV-measurements for one sample and, in addition, to employ more than one tip.

    Elektrotechnik und MedientechnikMaschinenbau und Mechatronik

    Zeitschriftenartikel

    T. Schweinböck, J. Kiely, Günther Benstetter, R. Stamp, Werner Frammelsberger

    Simplified tunnelling current calculation for MOS structures with ultra-thin oxides for Conductive Atomic Force Microscopy investigations

    Materials Science & Engineering B, vol. 116, no. 2, pp. 168-174

    2004

    DOI: 10.1016/j.mseb.2004.09.027

    Abstract anzeigen

    As charge tunnelling through thin and ultra-thin silicon dioxide layers is regarded as the driving force for MOS device degradation the determination and characterisation of electrically week spots is of paramount importance for device reliability and failure analysis. Conductive atomic force microscopy (C-AFM) is able to address this issue with a spatial resolution smaller than the expected breakdown spot. For the determination of the electrically active oxide thickness in practice an easy to use model with sufficient accuracy and which is largely independent of the oxide thickness is required. In this work a simplified method is presented that meets these demands. The electrically active oxide thickness is determined by matching of C-AFM voltage–current curves and a tunnelling current model, which is based on an analytical tunnelling current approximation. The model holds for both the Fowler–Nordheim tunnelling and the direct tunnelling regime with one single tunnelling parameter set. The results show good agreement with macroscopic measurements for gate voltages larger than approximately 0.5–1 V, and with microscopic C-AFM measurements. For this reason arbitrary oxides in the DT and the FNT regime may be analysed with high lateral resolution by C-AFM, without the need of a preselection of the tunnelling regime to be addressed.

    Elektrotechnik und MedientechnikMaschinenbau und Mechatronik

    Vortrag

    T. Schweinböck, J. Kiely, Günther Benstetter, Peter Breitschopf, R. Stamp, Werner Frammelsberger

    Atomic Force Microscopy Studies of Thin and Ultra-thin SiO2 Films

    Final Report

    2nd VDE World Microtechnologies Congress, München

    2003

    Elektrotechnik und MedientechnikMaschinenbau und Mechatronik

    Beitrag (Sammelband oder Tagungsband)

    T. Schweinböck, J. Kiely, Günther Benstetter, R. Stamp, Werner Frammelsberger

    Advanced Analysis of Thin and Ultrathin SiO2/Si Interfaces with Combined Atomic Force Microscopy Methods

    29th International Symposium for Testing and Failure Analysis, Santa Clara, CA, USA, pp. 406-412

    2003

    Elektrotechnik und MedientechnikMaschinenbau und Mechatronik

    Zeitschriftenartikel

    T. Schweinböck, J. Kiely, Günther Benstetter, R. Stamp, Werner Frammelsberger

    Characterization of thin and ultrathin SiO2 films and SiO2/Si interfaces with combined conducting and topographic atomic force microscopy

    Microelectronics Reliability, vol. 43, no. 1, pp. 1465-1470

    2003

    DOI: 10.1016/S0026-2714(03)00260-9

    Elektrotechnik und MedientechnikMaschinenbau und Mechatronik

    Vortrag

    J. Kiely, Günther Benstetter, R. Stamp, Werner Frammelsberger

    Combined AFM Methods to Improve Reliability Investigations of Thin Oxides

    Final Report

    IEEE International Integrated Reliability Workshop, Lake Tahoe, CA, USA

    Elektrotechnik und MedientechnikMaschinenbau und Mechatronik

    Vortrag

    T. Schweinböck, J. Kiely, Günther Benstetter, R. Stamp, Werner Frammelsberger

    Conducting Atomic Force Microscopy Studies for Reliability Evaluation of Ultrathin SiO2 Films

    Final Report

    IEEE International Integrated Reliability Workshop, Lake Tahoe, CA, USA

    Elektrotechnik und MedientechnikMaschinenbau und Mechatronik

    Vortrag

    J. Kiely, Günther Benstetter, R. Stamp, Werner Frammelsberger

    Characterization of thin and ultrathin SiO2 films and SiO2/Si interfaces with combined conducting and topographic atomic force microscopy

    14th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Arcachon, Frankreich

    Elektrotechnik und MedientechnikMaschinenbau und Mechatronik

    Vortrag

    T. Schweinböck, J. Kiely, Günther Benstetter, R. Stamp, Werner Frammelsberger

    Advanced Analysis of Thin and Ultrathin SiO2/Si Interfaces with Combined Atomic Force Microscopy Methods

    29th International Symposium for Testing and Failure Analysis, Santa Clara, CA, USA, pp. 406-412