Suche nach „[H.] [Hofer]“ hat 9 Publikationen gefunden

Angewandte Wirtschaftswissenschaften

Buch (Monographie)

B. Bittschi, B. Brandl, H. Hofer, S. Koch, Wolfgang Nagl, R. Sellner

Zukunft der Steuern in Österreich - Mittelfristige Projektion der Lohn-, Einkommen-, Körperschaft- und Umsatzsteuer

Studie im Auftrag des Bundesministeriums für Finanzen (unveröffentlicht)

2017

NachhaltigElektrotechnik und MedientechnikIQMA

Zeitschriftenartikel

Y. Ji, H. Fei, Y. Shi, V. Iglesias, D. Lewis, N. Jiebin, S. Long, M. Liu, Alexander Hofer, Werner Frammelsberger, Günther Benstetter, A. Scheuermann, P. McIntyre, M. Lanza

Characterization of the photocurrents generated by the laser of atomic force microscopes

Review of Scientific Instruments, vol. 87, no. 8

2016

DOI: 10.1063/1.4960597

Abstract anzeigen

The conductive atomic force microscope (CAFM) has become an essential tool for the nanoscale electronic characterization of many materials and devices. When studying photoactive samples, the laser used by the CAFM to detect the deflection of the cantilever can generate photocurrents that perturb the current signals collected, leading to unreliable characterization. In metal-coated semiconductor samples, this problem is further aggravated, and large currents above the nanometer range can be observed even without the application of any bias. Here we present the first characterization of the photocurrents introduced by the laser of the CAFM, and we quantify the amount of light arriving to the surface of the sample. The mechanisms for current collection when placing the CAFM tip on metal-coated photoactive samples are also analyzed in-depth. Finally, we successfully avoided the laser-induced perturbations using a two pass technique: the first scan collects the topography (laser ON) and the second collects the current (laser OFF). We also demonstrate that CAFMs without a laser (using a tuning fork for detecting the deflection of the tip) do not have this problem.

Angewandte Wirtschaftswissenschaften

Buch (Monographie)

Wolfgang Nagl, H. Hofer

Zumutbarkeitsbestimmungen auf dem österreichischen Arbeitsmarkt

Studie im Auftrag des Bundesministeriums der Finanzen

2015

NachhaltigElektrotechnik und MedientechnikIQMA

Zeitschriftenartikel

Manuel Bogner, Alexander Hofer, Günther Benstetter, H. Gruber, R.Y.Q. Fu

Differential 3ω method for measuring thermal conductivity of AIN and SI3N4 thin films

Thin Solid Films, vol. 591 Part B, pp. 267-270

2015

DOI: 10.1016/j.tsf.2015.03.031

Abstract anzeigen

The thermal conductivity λ of plasma enhanced chemical vapor deposited Si3N4 and sputtered AlN thin films deposited on silicon substrates were obtained utilizing the differential 3ω method. A thin electrically conductive strip was deposited onto the investigated thin film of interest, and used as both a heater and a temperature sensor. To study the thickness dependent thermal conductivity of AlN and Si3N4 films their thickness was varied from 300 to 1000 nm. Measurements were performed at room temperature at a chamber pressure of 3.1 Pa. The measured thermal conductivity values of AlN and Si3N4 thin films were between 5.4 and 17.6 Wm− 1 K− 1 and 0.8 up to 1.7 Wm− 1 K− 1, respectively. The data were significantly smaller than that of the bulk materials found in literature (i.e., λAlN = 250–285 Wm− 1 K− 1, λSi3N4 = 30 Wm− 1 K− 1), due to the scaling effects, and also strongly dependent on film thickness, but were comparable with literature for the corresponding thin films.

Elektrotechnik und MedientechnikIQMA

Vortrag

Manuel Bogner, Günther Benstetter, Alexander Hofer, H. Gruber

The differential 3ω method for measuring the thermal conductivity of AIN and SI3N4 thin films

16th International Conference on Thin Films (ICTF16), Dubrovnik, Kroatien

2014

Elektrotechnik und MedientechnikIQMA

Vortrag

Alexander Hofer, R. Biberger, Günther Benstetter, B. Wilke, H. Göbel

Scanning probe microscopy based electrical characterization of thin dielectric and organic semiconductor films

24th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Arcachon, Frankreich

2013

Elektrotechnik und MedientechnikIQMA

Zeitschriftenartikel

Alexander Hofer, R. Biberger, Günther Benstetter, B. Wilke, H. Göbel

Scanning probe microscopy based electrical characterization of thin dielectric and organic semiconductor films

Microelectronics Reliability, vol. 53, no. 9-11, pp. 1430-1433

2013

Abstract anzeigen

Scanning probe microscopy (SPM) techniques offer various characterization methods for thin organic films. However, the majority of the electrical SPM measurements is currently performed in contact mode operation and may lead to severe damage at the surface of soft organic materials. This work shows the electrical characterization of organic insulator and semiconductor films by use of two SPM techniques operating with reduced lateral forces between SPM tip and sample. The first one is intermittent-contact scanning-capacitance-microscopy (IC-SCM) which is used for the detection of the local surface capacitance. The second one is torsional resonance tunneling-atomic-force-microscopy (TR-TUNA) which shows the local conductivity respectively relative film thickness of the sample. It is found that the tunneling current distribution across 50 nm thick organic insulating films is very homogeneous and that inhomogeneities in P3HT and Pentacene films can be pinpointed even if no topographical variations are observable.

Elektrotechnik und MedientechnikIQMA

Vortrag

Alexander Hofer, B. Wilke, R. Biberger, Günther Benstetter, H. Göbel

Capacitance and Conductivity Mapping of Organic Films and Devices with Non-Contact SPM Methods

International Workshop on Scanning Probe Microscopy for Energy Applications, Mainz

2011

Elektrotechnik und MedientechnikIQMA

Vortrag

Günther Benstetter, R. Biberger, Alexander Hofer, H. Göbel

Intermittent-Contact Scanning Capacitance Analysis of Thin Dielectric Films and Semiconductor Devices

Invited Talk

5th International Conference on Technological Advances of Thin Films & Surface Coatings, Harbin, China

2010