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Suche nach „[G.] [Brüderl]“ hat 2 Publikationen gefunden
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    Elektrotechnik und MedientechnikIQMA

    Zeitschriftenartikel

    Alexander Hofer, C. Leirer, Günther Benstetter, R. Biberger, G. Brüderl

    Analysis of crystal defects on GaN based semiconductors with advanced scanning probe microscope technique

    Thin Solid Films, vol. 544, no. Oktober, pp. 139-143

    2013

    Abstract anzeigen

    The correlation of surface pits with leakage currents in gallium nitride (GaN) films are studied with scanning probe microscopy (SPM) techniques. The analyses were performed at both single n-GaN films grown on free-standing GaN and completely processed GaN light-emitting diode (LED) structures on sapphire substrates both grown by metal organic chemical vapor phase epitaxy. Topographical SPM images acquired with ultra-sharp probes were superimposed with current maps obtained by conductive atomic force microscopy (CAFM). The applicability of two different modifications of CAFM techniques has been studied. For both sample types, CAFM has revealed a clear correlation between forward-bias leakage current and locations of surface pits. In case of the LED structure, additional local current–voltage characteristics show that enhanced current conduction occurs in both forward and reverse bias on surface pit positions.

    Elektrotechnik und MedientechnikIQMA

    Vortrag

    Alexander Hofer, C. Leirer, Günther Benstetter, R. Biberger, G. Brüderl

    Analysis of crystal defects on GaN-based semiconductors with advanced scanning probe microscope techniques

    Invited Talk

    6th International Conference on Technological Advances of Thin Films & Surface Coatings (THINFILMS2012), Singapur, Singapur

    2012