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Suche nach „[F.] [Campabadal]“ hat 2 Publikationen gefunden
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    F: Elektrotechnik und MedientechnikI: IQMA

    Zeitschriftenartikel

    A. Bayerl, M. Lanza, M. Porti, M. Nafría, X. Aymerich, F. Campabadal, Günther Benstetter

    Nanoscale and Device Level Gate Conduction Variability of High-k Dielectrics-Based Metal-Oxide-Semiconductor Structures

    IEEE Transactions on Device and Materials Reliability, vol. 11, no. September, pp. 495-501

    2011

    DOI: 10.1109/TDMR.2011.2161087

    Abstract anzeigen

    The polycrystalline microstructure of the high-k dielectric of gate stacks in metal-oxide-semiconductor (MOS) devices can be a potential source of variability. In this paper, a conductive atomic force microscope (CAFM) and a Kelvin probe force microscope (KPFM) have been used to investigate how the thickness and the crystallization (after a thermal annealing) of the high-k layer affect the nanoscale morphological and electrical properties of the gate stack. The impact of such nanoscale properties on the reliability and variability of the global gate electrical characteristics of fully processed MOS devices has also been investigated.

    F: Elektrotechnik und MedientechnikI: IQMA

    Zeitschriftenartikel

    A. Bayerl, M. Lanza, M. Porti, F. Campabadal, M. Nafría, X. Aymerich, Günther Benstetter

    Reliability and gate conduction variability of HfO2-based MOS devices: A combined nanoscale and device level study

    Microelectronic Engineering, vol. 88, pp. 1334-1337

    2011

    Abstract anzeigen

    The electrical properties and reliability of MOS devices based on high-k dielectrics can be affected when the gate stack is subjected to an annealing process, which can lead to the polycrystallization of the high-k layer. In this work, a Conductive Atomic Force Microscope (C-AFM) has been used to study the nanoscale electrical conduction and reliability of amorphous and polycrystalline HfO2 based gate stacks. The link between the nanoscale properties and the reliability and gate conduction variability of fully processed MOS devices has also been investigated.