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Proceedings of the 28th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF) [25-28 September, 2017; Bordeaux, Frankreich]

2017

Nachhaltig F: Elektrotechnik und Medientechnik I: IQMA

Zeitschriftenartikel

C. Yang, D. Souchay, M. Kneiß, Manuel Bogner, H. Wei, M. Lorenz, O. Oeckler, Günther Benstetter, Y. Fu, M. Grundmann

Transparent flexible thermoelectric material based on non-toxic earth-abundant p-type copper iodide thin film

nature COMMUNICATIONS, no. July, pp. 1-7

2017

DOI: 10.1038/ncomms1607

Abstract anzeigen

Thermoelectric devices that are flexible and optically transparent hold unique promise for future electronics. However, development of invisible thermoelectric elements is hindered by the lack of p-type transparent thermoelectric materials. Here we present the superior room-temperature thermoelectric performance of p-type transparent copper iodide (CuI) thin films. Large Seebeck coefficients and power factors of the obtained CuI thin films are analysed based on a single-band model. The low-thermal conductivity of the CuI films is attributed to a combined effect of the heavy element iodine and strong phonon scattering. Accordingly, we achieve a large thermoelectric figure of merit of ZT=0.21 at 300 K for the CuI films, which is three orders of magnitude higher compared with state-of-the-art p-type transparent materials. A transparent and flexible CuI-based thermoelectric element is demonstrated. Our findings open a path for multifunctional technologies combing transparent electronics, flexible electronics and thermoelectricity.

Nachhaltig F: Elektrotechnik und Medientechnik F: Maschinenbau und Mechatronik I: IQMA

Zeitschriftenartikel

Tobias Berthold, Günther Benstetter, Werner Frammelsberger, Manuel Bogner, R. Rodríguez, M. Nafría

Protective nanometer films for reliable Cu-Cu connections

Microelectronics Reliability, vol. 76-77, no. September, pp. 383-389

2017

DOI: 10.1016/j.microrel.2017.07.001

Nachhaltig F: Elektrotechnik und Medientechnik I: IQMA

Zeitschriftenartikel

Manuel Bogner, Alexander Hofer, Günther Benstetter, H. Gruber, R.Y.Q. Fu

Differential 3ω method for measuring thermal conductivity of AIN and SI3N4 thin films

Thin Solid Films, vol. 591 Part B, pp. 267-270

2015

DOI: 10.1016/j.tsf.2015.03.031

Abstract anzeigen

The thermal conductivity λ of plasma enhanced chemical vapor deposited Si3N4 and sputtered AlN thin films deposited on silicon substrates were obtained utilizing the differential 3ω method. A thin electrically conductive strip was deposited onto the investigated thin film of interest, and used as both a heater and a temperature sensor. To study the thickness dependent thermal conductivity of AlN and Si3N4 films their thickness was varied from 300 to 1000 nm. Measurements were performed at room temperature at a chamber pressure of 3.1 Pa. The measured thermal conductivity values of AlN and Si3N4 thin films were between 5.4 and 17.6 Wm− 1 K− 1 and 0.8 up to 1.7 Wm− 1 K− 1, respectively. The data were significantly smaller than that of the bulk materials found in literature (i.e., λAlN = 250–285 Wm− 1 K− 1, λSi3N4 = 30 Wm− 1 K− 1), due to the scaling effects, and also strongly dependent on film thickness, but were comparable with literature for the corresponding thin films.

F: Elektrotechnik und Medientechnik I: IQMA

Vortrag

Manuel Bogner, Günther Benstetter, Alexander Hofer, H. Gruber

The differential 3ω method for measuring the thermal conductivity of AIN and SI3N4 thin films

16th International Conference on Thin Films (ICTF16), Dubrovnik, Kroatien

2014

F: Elektrotechnik und Medientechnik I: IQMA

Vortrag

Manuel Bogner, Günther Benstetter

Determining the thermal conductivity of thin layers with the macroscopic 3ω method

Applied Research Conference (ARC), Deggendorf

2013