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Suche nach „[B.] [Tillack]“ hat 3 Publikationen gefunden
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    NachhaltigAngewandte Naturwissenschaften und WirtschaftsingenieurwesenTAZ Spiegelau

    Zeitschriftenartikel

    C. Baristiran Kaynak, M. Lukosius, B. Tillack, C. Wenger, T. Blomberg, Günther Ruhl

    Single SrTiO3 and Al2O3/SrTiO3/Al2O3 based MIM capacitors: Impact of the bottom electrode material

    Microelectronic Engineering, vol. 88, no. 7, pp. 1521-1524

    2011

    DOI: 10.1016/j.mee.2011.03.022

    Abstract anzeigen

    Metal–Insulator–Metal (MIM) capacitors with atomic layer deposited (ALD) single SrTiO3 dielectric and Al2O3/SrTiO3/Al2O3 multilayer dielectric have been deposited on TaN and TiN bottom electrodes. The MIM stacks have been analyzed and compared in terms of electrical and structural properties. The results indicate that MIMs with multilayer dielectrics provide better leakage current performance than the ones with single dielectrics while capacitance density is decreased. Additional Al2O3 layers prevented the crystallization of SrTiO3 in the multilayer dielectric stack. The decreased capacitance density in MIMs with multilayer dielectric is attributed to the amorphous structure of SrTiO3 and the series capacitance of top and bottom Al2O3 layers. Furthermore, MIM capacitors with single SrTiO3 dielectric layer on TiN electrodes indicated better capacitance density compared to the one with TaN electrodes. The lower capacitance density of the single SrTiO3 dielectric on TaN electrodes is correlated to the interfacial layer formation between SrTiO3 and TaN electrodes.

    NachhaltigAngewandte Naturwissenschaften und WirtschaftsingenieurwesenTAZ Spiegelau

    Zeitschriftenartikel

    C. Baristiran Kaynak, M. Lukosius, I. Costina, B. Tillack, C. Wenger, Günther Ruhl, T. Blomberg

    Enhanced leakage current behavior of Sr2Ta2O7-x/SrTiO3 bilayer dielectrics for metal-insulator-metal capacitors

    Thin Solid Films, vol. 519, no. 17, pp. 5734-5739

    2011

    DOI: 10.1016/j.tsf.2011.01.001

    Abstract anzeigen

    Metal–Insulator–Metal (MIM) capacitors are one of the most essential components of radio frequency devices and analog/mixed-signal integrated circuits. In order to obtain high capacitance densities in MIM devices, high-k materials have been considered to be promising candidates to replace the traditional insulators. The challenging point is that the dielectric material must demonstrate high capacitance density values with low leakage current densities. In this work, SrTiO3 based MIM capacitors have been investigated and the electrical performance of the devices have been optimized by using bilayered systems of Sr2Ta2O7−x/SrTiO3 with different thicknesses of Sr2Ta2O7−x. Sputtering X-Ray photoelectron spectroscopy (XPS) measurements have been applied to investigate the interfaces between the thin film constituents of the MIM stacks. The optimized bilayered system provides a leakage current density of 8∗10− 8 A/cm2 at 2 V (bottom electrode injection) and a high capacitance density of 13 fF/μm2.

    NachhaltigAngewandte Naturwissenschaften und WirtschaftsingenieurwesenTAZ Spiegelau

    Zeitschriftenartikel

    C. Baristiran Kaynak, M. Lukosius, I. Costina, B. Tillack, C. Wenger, Günther Ruhl, S. Rushworth

    Investigations of thermal annealing effects on electrical and structural properties of SrTaO based MIM capacitor

    Microelectronic Engineering, vol. 87, no. 12, pp. 2561-2564

    2010

    DOI: 10.1016/j.mee.2010.07.015

    Abstract anzeigen

    The annealing effects on dielectric and electrode materials in Ti/SrTaO/TaN/TiN/Ti/Si metal–insulator–metal (MIM) capacitors were studied. The electrical and structural properties were investigated after subjecting the samples to annealing temperatures of 500 °C, 700 °C and 900 °C. The electrical results revealed that the dielectric constant (k value) of Sr–Ta–O increased from 18 to 50 with increasing annealing temperature. This improvement in k value can be associated to the crystallization of dielectric layer. However, the leakage current density increased several orders of magnitudes with increase of the annealing temperatures. This observation was attributed to crystallization of dielectric, degradation of TaN electrode and out-diffusion of Si from the substrate.