Publikationen


Suche nach „[B.] [Stoehr]“ hat 4 Publikationen gefunden
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    NachhaltigF: Angewandte Naturwissenschaften und WirtschaftsingenieurwesenS: TC Teisnach Sensorik

    Beitrag (Sammelband oder Tagungsband)

    Y.-C. Huang, M. Buie, B. Stoehr, A. Buxbaum, Günther Ruhl

    Extended Chamber Matching and Repeatability Study for Chrome Etch

    21th Annual BACUS Symposium on Photomask Technology (October 3-5, 2001; Monterey, CA, USA), Bellingham (Wash.), vol. Vol. 4562

    2001

    ISBN: 9780819442901

    DOI: 10.1117/12.458344

    Abstract anzeigen

    Shrinking design rules, optical proximity correction and advanced phase shifting techniques require new methods of photomask manufacturing. The Applied Materials Centura photomask etch chamber leverages Applied Materials' extensive etch experience to provide an innovative dry etch solution to the mask dry etch challenges for < 0.13 micrometers device generations. Repeatable, consistent, stable etch performance is critical for advanced mask manufacturing. An extended chamber matching and repeatability study for chrome etch found that stable chrome and photoresist etch rates (and therefore selectivities) are produced on the Applied Materials Centura photomask etch chamber. The etch responses are consistent mask to mask as well as chamber to chamber. Prior to the extended study, pumping efficiencies, RF source and bias calibrations and optical emission spectral responses were compared. Since the study was performed at several different sites, the metrology tools were calibrated using masks specifically designed for this purpose. The marathon testing illustrates the stable etch performance over time.

    NachhaltigF: Angewandte Naturwissenschaften und WirtschaftsingenieurwesenS: TC Teisnach Sensorik

    Beitrag (Sammelband oder Tagungsband)

    M. Buie, B. Stoehr, A. Buxbaum, Günther Ruhl

    An Endpoint Solution for Photomask Chrome Loads Down to 0.25%

    21th Annual BACUS Symposium on Photomask Technology (October 3-5, 2001; Monterey, CA, USA), Bellingham (Wash.), vol. Vol. 4562

    2001

    ISBN: 9780819442901

    DOI: 10.1117/12.458342

    Abstract anzeigen

    Endpoint measurement sensitivity requirements in photomask can make or break an etch. The exposed chrome on today's photomask can vary between 0.25 percent and approximately 50 percent. Although excessive overetch does not deleteriously impact the underlying quartz, accurate endpoint detection is essential for preserving the critical dimension (CD) and CD uniformity across the mask. In order to provide a strong endpoint solution for photomask etch, a systematic investigation of etches with varying chrome loads was conducted. Passive monitoring of the optical emission spectra does not impact or interfere with the etch process. Also this method does not need specified endpoint sites on the mask as interferometric methods and provides an integrated endpoint signal over the whole mask area independent of the chrome clearing pattern. Two strong candidate wavelengths for calling endpoint in chrome etch were identified. However, optical emission spectroscopy endpoint detection has two drawbacks, which have historically limited its applicability. Firstly, the exposed area may be too low and/or secondly, the etch rate may be too slow for detection. Both of these concerns have been addressed in this paper by varying the exposed area on the photomasks from 0.25 percent to 99 percent. Endpoint was easily detected even for the slowest possible etch rate and for low exposed area.

    NachhaltigF: Angewandte Naturwissenschaften und WirtschaftsingenieurwesenS: TC Teisnach Sensorik

    Zeitschriftenartikel

    Günther Ruhl, R. Dietrich, R. Ludwig, N. Falk, T. Morrison, B. Stoehr

    Optimizing the Chromium Dry Etch Process

    Semiconductor International, vol. 24, pp. 239-246

    2001

    Abstract anzeigen

    A dry etch process for etching chromium-on-glass masks was developed and optimized. During optimization for minimum etch bias, a new type of metrology tool was used to measure critical dimensions and characterize the sidewall profiles of both the photoresist and the final mask structures.

    NachhaltigF: Angewandte Naturwissenschaften und WirtschaftsingenieurwesenS: TC Teisnach Sensorik

    Beitrag (Sammelband oder Tagungsband)

    Günther Ruhl, R. Dietrich, R. Ludwig, N. Falk, T. Morrison, B. Stoehr

    Chrome dry etch characterization using Surface Nano Profiling

    Proceedings of the 20th Annual BACUS Symposium on Photomask Technology (September 13-15, 2000; Monterey, CA, USA), vol. Vol. 4186

    2001

    DOI: 10.1117/12.410753

    Abstract anzeigen

    In this paper we describe the development of a chrome dry etch process on a new type of mask etch tool. One crucial goal was to minimize the CD etch bias. To meet this goal, a procedure for the direct characterization of CD etch bias was developed. The common methods for measuring the CD etch bias as resist-to-chrome CD difference, such as confocal optical microscope or SEM measurement, only give correct results, if the sidewalls are identical to the calibration standard. This is normally not the case as, due to the differing step height of resist and chrome, and the fact that during process development, in particular, the sidewall shapes and angles can vary significantly. Thus, it is very important to use a CD measurement method which takes the sidewall shapes (slope, foot) into account. One novel method is the use of a Scanning Nano Profiler (SNP) which was derived from the AFM principle. In contrast to AFM the use of a special high aspect ratio tip with 90° sidewall angle, in combination with pixelwise scanning of the substrate surface, provides information about the true sidewall shape and CD.