Suche nach „[A.] [Zauner]“ hat 2 Publikationen gefunden
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    NachhaltigAngewandte Naturwissenschaften und WirtschaftsingenieurwesenTAZ Spiegelau


    S. Rushworth, S. Haukkac, W. Besling, T. Blomberg, B. Riou, Günther Ruhl, A. Roeste, A. Zauner, M. Lukosius, W. Lehnert, E. Langereis, P. Baumann, C. Wenger, F. Roozeboom, S. Lhostif, A. Halimaou, C. Baristiran Kaynak, W.M.M. Kessels

    Dielectric Material Options for Integrated Capacitors

    ECS Journal of Solid State Science and Technology, vol. 3, no. 8


    DOI: 10.1149/2.0101408jss

    Abstract anzeigen

    Future MIM capacitor generations will require significantly increased specific capacitances by utilization of high-k dielectric materials. In order to achieve high capacitance per chip area, these dielectrics have to be deposited in three-dimensional capacitor structures by ALD or AVD (atomic vapor deposition) process techniques. In this study eight dielectric materials, which can be deposited by these techniques and exhibit the potential to reach k-values of over 50 were identified, prepared and characterized as single films and stacked film systems. To primarily focus on a material comparison, preliminary processes were used for film deposition on planar test devices. Measuring leakage current density versus the dielectric constant k shows that at low voltages (≤1 V) dielectrics with k-values up to 100 satisfy the typical leakage current density specification of <10−7 A/cm2 for MIM capacitors. At higher voltages (3 V) this specification is only fulfilled for dielectrics with k-values below 45. As a consequence, the maximum achievable capacitance gain by introducing high-k dielectrics depends on the operating voltage of the application, such as DRAM capacitors or RF and blocking capacitors. To meet the reliability requirements for RF and blocking capacitors, high-k dielectric film thicknesses of up to 50 nm are necessary.

    NachhaltigAngewandte Naturwissenschaften und WirtschaftsingenieurwesenTAZ Spiegelau


    A. Abrutis, Günther Ruhl, V. Kubilius, M. Skapas, A. Zauner, M. Lukosius, C. Wenger, C. Baristiran Kaynak

    Metal-insulator-metal capacitors with MOCVD grown Ce-Al-O as dielectric

    Microelectronic Engineering, vol. 88, no. 7, pp. 1529-1532


    DOI: 10.1016/j.mee.2011.03.044

    Abstract anzeigen

    Ce–Al–O thin films were prepared on 70 nm TiN/Si(1 0 0) substrates by pulsed injection metal organic chemical vapor deposition (PI-MOCVD) for metal–insulator–metal (MIM) applications. Depositions were carried out at 400 °C using two separate Ce and Al precursors. In order to get Ce–Al–O films with different stoichiometry, Al2O3 and CeO2 were mixed with different Ce:Al precursors’ ratios. According to the XRD analysis, the as deposited films were amorphous if more aluminum was injected than cerium, and crystalline – if they are cerium rich. Electrical properties have been investigated in MIM capacitors after e-beam evaporation of Au top electrodes. Oxides possess a dielectric constant of 10–20 in combination with leakage current densities as low as 10−5 A/cm2 at −2 V. The post deposition annealing (PDA) at 600 °C and 850 °C in N2 for 5 min lead to the diffusion of Ti from TiN bottom electrode and formation of the rutile TiO2 phase. Nevertheless, CeAlO3 films were obtained if the ratio of injected Ce:Al was 1:1. The k values increased to 60 in this case, but the leakage current density worsened to 10−3 A/cm2 at −2 V.