Suche nach „[A.] [Gschwandtner]“ hat 2 Publikationen gefunden
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    NachhaltigF: Angewandte Naturwissenschaften und WirtschaftsingenieurwesenS: TC Teisnach Sensorik


    W. Lehnert, Günther Ruhl, A. Gschwandtner

    Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide

    Journal of Vacuum Science & Technology A, vol. 30, no. 1


    DOI: 10.1116/1.3670876

    Abstract anzeigen

    Among many promising high-k dielectrics, TiO2 is an interesting candidate because of its relatively high k value of over 40 and its easy integration into existing semiconductor manufacturing schemes. The most critical issues of TiO2 are its low electrical stability and its high leakage current density. However, doping TiO2 with Al has shown to yield significant improvement of layer quality on Ru electrodes [S. K. Kim et al., Adv. Mater. 20, 1429 (2008)]. In this work we investigated if atomic layer deposition (ALD) of Al doped TiO2 is feasible in a batch system. Electrical characterizations were done using common electrode materials like TiN, TaN, or W. Additionally, the effect of plasma enhanced processing in this reactor was studied. For this investigation a production batch ALD furnace has been retrofitted with a plasma source which can be used for post deposition anneals with oxygen radicals as well as for directly plasma enhanced ALD. After evaluation of several Ti precursors a deposition process for AlTiOx with excellent film thickness and composition uniformity was developed. The effects of post deposition anneals, Al2O3 interlayers between electrode and TiO2, Al doping concentration, plasma enhanced deposition and electrode material type on leakage current density are shown. An optimized AlTiOx deposition process on TaN electrodes yields to leakage current density of 5 × 10−7 A/cm2 at 2 V and k values of about 35. Thus, it could be demonstrated that a plasma enhanced batch ALD process for Al doped TiO2 is feasible with acceptable leakage current density on a standard electrode material.

    NachhaltigF: Angewandte Naturwissenschaften und WirtschaftsingenieurwesenS: TC Teisnach Sensorik


    G. Roeder, C. Manke, P. Baumann, S. Petersen, V. Yanev, A. Gschwandtner, Günther Ruhl, P. Petrik, M. Schellenberger, L. Pfitzner, H. Ryssel

    Characterization of Ru and RuO2 thin films prepared by pulsed metal organic chemical vapor deposition

    Current Topics in Solid State Physics, vol. 5, no. 5, pp. 1231-1234


    DOI: 10.1002/pssc.200777865

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    Ultra‐thin ruthenium (Ru) layers were fabricated by pulsed metal organic chemical vapor deposition in an Aixtron Tricent reactor using a metal‐organic Ru precursor. Layer deposition was performed on different metal barrier combinations and on Al2O3 dielectric layers used in the fabrication of advanced Metal‐Insulator‐Metal (MIM) capacitor structures and on thermal SiO2 as reference structure. Ru layers with a thickness of 10 nm were characterized by Spectroscopic Ellipsometry (SE) and additional reference methods such as Transmission Electron Microscopy (TEM), Atomic Force Microscopy (AFM), and X‐Ray Reflectometry (XRR). As deposited and in situ annealed Ru layers were characterized by SE applying Drude‐Lorentz‐ and Effective Medium Approximation (EMA) models. It was shown that the deposited layers consist of a Ru‐RuO2 bilayer structure. By in situ annealing, the RuO2 layer thickness is reduced and highly pure Ru films are obtained. On the metal barriers the formation of a metal oxide interface, which is related to the deposition process, was determined.