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Suche nach „[A.] [Abrutis]“ hat 3 Publikationen gefunden
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    NachhaltigF: Angewandte Naturwissenschaften und WirtschaftsingenieurwesenS: TC Teisnach Sensorik

    Zeitschriftenartikel

    M. Lukosius, C. Wenger, T. Blomberg, A. Abrutis, G. Lupina, P. Baumann, Günther Ruhl

    Electrical and Morphological Properties of ALD and AVD Grown Perovskite-Type Dielectrics and Their Stacks for Metal-Insulator-Metal Applications

    ECS Journal of Solid State Science and Technology, vol. 1, no. 1

    2012

    NachhaltigF: Angewandte Naturwissenschaften und WirtschaftsingenieurwesenS: TC Teisnach Sensorik

    Zeitschriftenartikel

    C. Wenger, M. Lukosius, T. Blomberg, A. Abrutis, P. Baumann, Günther Ruhl

    ALD and AVD Grown Perovskite-type Dielectrics for Metal-Insulator-Metal Application

    (Invited)

    ECS Transactions (The Electrochemical Society), vol. 41, no. 2, pp. 53-61

    2011

    DOI: 10.1149/1.3633654

    Abstract anzeigen

    Atomic Vapor Deposition (AVD) and Atomic Layer Deposition (ALD) techniques were successfully applied for the depositions of perovskite type dielectrics, namely, Sr-Ta-O, Ti-Ta-O, Sr-Ti-O, Ba-Hf-O, Nb-Ta-O and Ce-Al-O. Thin films were investigated as alternative dielectrics for Metal-Insulator-Insulator (MIM) capacitors. Structural and electrical properties are investigated after depositing the metal oxides on 200 mm TiN/Si (100) substrates within the temperature range of 225-400 ºC. Electrical properties, investigated after sputtering Au top electrodes, revealed that the main characteristics are different for each dielectric. The highest dielectric constants were achieved for crystalline SrTiO3 (k=95), crystalline CeAlO3 (k = 60) and amorphous Ti-Ta-O (k = 50) films. However, Sr-Ta-O based MIM capacitors showed the lowest leakage current densities as well as the smallest capacitancevoltage linearity coefficients.

    NachhaltigF: Angewandte Naturwissenschaften und WirtschaftsingenieurwesenS: TC Teisnach Sensorik

    Zeitschriftenartikel

    M. Lukosius, C. Baristiran Kaynak, A. Abrutis, M. Skapas, V. Kubilius, A. Zauner, Günther Ruhl, C. Wenger

    Metal-insulator-metal capacitors with MOCVD grown Ce-Al-O as dielectric

    Microelectronic Engineering, vol. 88, no. 7, pp. 1529-1532

    2011

    DOI: 10.1016/j.mee.2011.03.044

    Abstract anzeigen

    Ce–Al–O thin films were prepared on 70 nm TiN/Si(1 0 0) substrates by pulsed injection metal organic chemical vapor deposition (PI-MOCVD) for metal–insulator–metal (MIM) applications. Depositions were carried out at 400 °C using two separate Ce and Al precursors. In order to get Ce–Al–O films with different stoichiometry, Al2O3 and CeO2 were mixed with different Ce:Al precursors’ ratios. According to the XRD analysis, the as deposited films were amorphous if more aluminum was injected than cerium, and crystalline – if they are cerium rich. Electrical properties have been investigated in MIM capacitors after e-beam evaporation of Au top electrodes. Oxides possess a dielectric constant of 10–20 in combination with leakage current densities as low as 10−5 A/cm2 at −2 V. The post deposition annealing (PDA) at 600 °C and 850 °C in N2 for 5 min lead to the diffusion of Ti from TiN bottom electrode and formation of the rutile TiO2 phase. Nevertheless, CeAlO3 films were obtained if the ratio of injected Ce:Al was 1:1. The k values increased to 60 in this case, but the leakage current density worsened to 10−3 A/cm2 at −2 V.