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Suche nach „[A.] [Abrutis]“ hat 3 Publikationen gefunden
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    NachhaltigAngewandte Naturwissenschaften und WirtschaftsingenieurwesenTAZ Spiegelau

    Zeitschriftenartikel

    A. Abrutis, T. Blomberg, Günther Ruhl, P. Baumann, M. Lukosius, C. Wenger, G. Lupina

    Electrical and Morphological Properties of ALD and AVD Grown Perovskite-Type Dielectrics and Their Stacks for Metal-Insulator-Metal Applications

    ECS Journal of Solid State Science and Technology, vol. 1, no. 1

    2012

    NachhaltigAngewandte Naturwissenschaften und WirtschaftsingenieurwesenTAZ Spiegelau

    Zeitschriftenartikel

    A. Abrutis, T. Blomberg, Günther Ruhl, M. Lukosius, P. Baumann, C. Wenger

    ALD and AVD Grown Perovskite-type Dielectrics for Metal-Insulator-Metal Application

    (Invited)

    ECS Transactions, vol. 41, no. 2, pp. 53-61

    2011

    DOI: 10.1149/1.3633654

    Abstract anzeigen

    Atomic Vapor Deposition (AVD) and Atomic Layer Deposition (ALD) techniques were successfully applied for the depositions of perovskite type dielectrics, namely, Sr-Ta-O, Ti-Ta-O, Sr-Ti-O, Ba-Hf-O, Nb-Ta-O and Ce-Al-O. Thin films were investigated as alternative dielectrics for Metal-Insulator-Insulator (MIM) capacitors. Structural and electrical properties are investigated after depositing the metal oxides on 200 mm TiN/Si (100) substrates within the temperature range of 225-400 ºC. Electrical properties, investigated after sputtering Au top electrodes, revealed that the main characteristics are different for each dielectric. The highest dielectric constants were achieved for crystalline SrTiO3 (k=95), crystalline CeAlO3 (k = 60) and amorphous Ti-Ta-O (k = 50) films. However, Sr-Ta-O based MIM capacitors showed the lowest leakage current densities as well as the smallest capacitancevoltage linearity coefficients.

    NachhaltigAngewandte Naturwissenschaften und WirtschaftsingenieurwesenTAZ Spiegelau

    Zeitschriftenartikel

    A. Abrutis, Günther Ruhl, V. Kubilius, M. Skapas, A. Zauner, M. Lukosius, C. Wenger, C. Baristiran Kaynak

    Metal-insulator-metal capacitors with MOCVD grown Ce-Al-O as dielectric

    Microelectronic Engineering, vol. 88, no. 7, pp. 1529-1532

    2011

    DOI: 10.1016/j.mee.2011.03.044

    Abstract anzeigen

    Ce–Al–O thin films were prepared on 70 nm TiN/Si(1 0 0) substrates by pulsed injection metal organic chemical vapor deposition (PI-MOCVD) for metal–insulator–metal (MIM) applications. Depositions were carried out at 400 °C using two separate Ce and Al precursors. In order to get Ce–Al–O films with different stoichiometry, Al2O3 and CeO2 were mixed with different Ce:Al precursors’ ratios. According to the XRD analysis, the as deposited films were amorphous if more aluminum was injected than cerium, and crystalline – if they are cerium rich. Electrical properties have been investigated in MIM capacitors after e-beam evaporation of Au top electrodes. Oxides possess a dielectric constant of 10–20 in combination with leakage current densities as low as 10−5 A/cm2 at −2 V. The post deposition annealing (PDA) at 600 °C and 850 °C in N2 for 5 min lead to the diffusion of Ti from TiN bottom electrode and formation of the rutile TiO2 phase. Nevertheless, CeAlO3 films were obtained if the ratio of injected Ce:Al was 1:1. The k values increased to 60 in this case, but the leakage current density worsened to 10−3 A/cm2 at −2 V.